Orientation Dependence of Etch Pit Density in (111) and (211) CdZnTe Everson Etch

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• 作者：Lindsay Burgess ; Francis Joseph Kumar ; Jason Mackenzie
• 关键词：Etch pit density ; EPD ; Everson ; CZT ; CdZnTe ; orientation
• 刊名：Journal of Electronic Materials
• 出版年：2015
• 出版时间：October 2015
• 年：2015
• 卷：44
• 期：10
• 页码：3277-3282
• 全文大小：1,167 KB
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• 作者单位：Lindsay Burgess (1)
  Francis Joseph Kumar (1)
  Jason Mackenzie (1)
  
  1. Redlen Technologies, 1763 Sean Heights, Victoria, BC, V8M 1X6, Canada
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  Electronics, Microelectronics and Instrumentation
  Solid State Physics and Spectroscopy
  
• 出版者：Springer Boston
• ISSN：1543-186X

文摘

Everson solution is widely used for dislocation etching on (111)B and (211)B facets of CdTe and CdZnTe (CZT) wafers, but (211)B etch pit density (EPD) counts are lower. In this study, the correlation between the (111) and (211) Everson EPD counts was quantified by etching incrementally misoriented (111)B and (211)B facets of CdZnTe with counting by semi-automated optical microscopy. The EPD was found to decrease exponentially with increasing misorientation angle from (111)B. The results indicate that, for EPD to be a quantitative indicator of crystalline quality, precise crystal orientation angles must be taken into account. Based on the exponential curve fit, an estimation of the (111)B EPD values can be extrapolated from the EPD measured for (211)B etching. Keywords Etch pit density EPD Everson CZT CdZnTe orientation