Analysis of Etched CdZnTe Substrates
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- 作者：J. D. Benson ; L. O. Bubulac ; M. Jaime-Vasquez…
- 刊名：Journal of Electronic Materials
- 出版年：2016
- 出版时间：September 2016
- 年：2016
- 卷：45
- 期：9
- 页码：4502-4510
- 全文大小：1,936 KB
- 刊物类别：Chemistry and Materials Science
- 刊物主题：Chemistry
Optical and Electronic Materials
Characterization and Evaluation Materials
Electronics, Microelectronics and Instrumentation
Solid State Physics and Spectroscopy - 出版者：Springer Boston
- ISSN：1543-186X
- 卷排序：45
文摘
State-of-the-art as-received (112)B CdZnTe substrates have been examined for surface impurity contamination and polishing residue. Two 4 cm × 4 cm and one 6 cm × 6 cm (112)B state-of-the-art as-received CdZnTe wafers were analyzed. A maximum surface impurity concentration of Al = 1.7 × 1015 atoms cm−2, Si = 3.7 × 1013 atoms cm−2, Cl = 3.12 × 1015 atoms cm−2, S = 1.7 × 1014 atoms cm−2, P = 1.1 × 1014 atoms cm−2, Fe = 1.0 × 1013 atoms cm−2, Br = 1.2 × 1014 atoms cm−2, and Cu = 4 × 1012 atoms cm−2 was observed on the as-received CdZnTe wafers. CdZnTe particulates and residual SiO2 polishing grit were observed on the surface of the as-received (112)B CdZnTe substrates. The polishing grit/CdZnTe particulate density on CdZnTe wafers was observed to vary across a 6 cm × 6 cm wafer from ∼4 × 107 cm−2 to 2.5 × 108 cm−2. The surface impurity and damage layer of the (112)B CdZnTe wafers dictate that a molecular beam epitaxy (MBE) preparation etch is required. The contamination for one 4 cm × 4 cm and one 6 cm × 6 cm CdZnTe wafer after a standard MBE Br:methanol preparation etch procedure was also analyzed. A maximum surface impurity concentration of Al = 2.4 × 1015 atoms cm−2, Si = 4.0 × 1013 atoms cm−2, Cl = 7.5 × 1013 atoms cm−2, S = 4.4 × 1013 atoms cm−2, P = 9.8 × 1013 atoms cm−2, Fe = 1.0 × 1013 atoms cm−2, Br = 2.9 × 1014 atoms cm−2, and Cu = 5.2 × 1012 atoms cm−2 was observed on the MBE preparation-etched CdZnTe wafers. The MBE preparation-etched surface contamination consists of Cd(Zn)Te particles/flakes. No residual SiO2 polishing grit was observed on the (112)B surface.KeywordsCdZnTe substratemolecular beam epitaxypolishing damageimpurity contamination