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Designing of infrared detector based on the bi-material micro-cantilever and its manufacturing process research
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  • 作者:Changlong Cai ; Weiguo Liu
  • 刊名:Microsystem Technologies
  • 出版年:2015
  • 出版时间:September 2015
  • 年:2015
  • 卷:21
  • 期:9
  • 页码:2033-2038
  • 全文大小:831 KB
  • 参考文献:Ishizuya T, Suzuki J, Akagawa K et al (2001) Optically readable bi-material infrared detector [J]. J Inst Image Inf Telev Eng 55:304鈥?09
    Ishizuya T, Suzuki J, Akagawa K et al (2002) 160聽脳聽120 pixels optically readable bi-material infrared detector [J]. Proc IEEE MEMS 5:578鈥?81
    Jones CDW, Bolle CA, Ryf R et al (2009) MEMS thermal imager with optical readout [J]. Sens Actuators A 155:47鈥?7View Article
    Manalis SR, Minne SC, Quate CF et al (1997) Two-dimensional micromechanical bimorph arrays for detection of thermal radiation [J]. Appl Phys Lett 70(24):3311鈥?313View Article
    Mao M, Perazzo T, Kwon O et al (1999) Direct-view uncooled micro-optomechanical infrared camera [J]. Proc IEEE MEMS:100鈥?05
    Panos GD (2000) Micromechanical uncooled photon detectors [J]. Proc SPIE 39(48):80鈥?3
    Perazzo T, Mao M, Kwon O et al (1999) Infrared vision uncooled micro-optomechanical camera [J]. Appl Phys Lett 74(23):3567鈥?569View Article
    Xiong Z, Zhang Q, Chen D, et al. (2007) Optical readout micro-cantilever array IR imaging system and performance analysis [J] 56(5):2529鈥?536
    Zhao Y, Mao M, Horowitz R et al (2002) Optomechanical uncooled infrared imaging system: design, micro-fabrication, and performance [J]. J MEMS 11(2):136鈥?46View Article
  • 作者单位:Changlong Cai (1)
    Weiguo Liu (1)

    1. Micro-optoelectrical System Laboratory, Xi鈥檃n Technological University, Xi鈥檃n, 710032, China
  • 刊物类别:Engineering
  • 刊物主题:Electronics, Microelectronics and Instrumentation
    Nanotechnology
    Mechanical Engineering
    Operating Procedures and Materials Treatment
  • 出版者:Springer Berlin / Heidelberg
  • ISSN:1432-1858
文摘
In this paper, the infrared detection system based on the optical readout, based on the thermal bi-material micro-cantilever principle, was designed, and a new detector structure was put forward, including the antireflective layer, infrared absorption layer, supporting arm, and so on. The device material of layers was selected, and the manufacturing process flow of detector was designed. The manufacturing process of infrared detection unit based on the bi-material cantilever are studied systemically, including the sacrificial layer patterning process, PECVD deposition process of silicon nitride thin films, ICP etching process of silicon nitride thin films, and deposition processing of Au reflective layer. Through the study, the better process parameters were obtained, and the influence law of process parameters on device performance was mastered.

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