EMI resisting MOSFET-only voltage reference based on ZTC condition

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• 作者：David Cordova ; Pedro Toledo…
• 关键词：Voltage reference ; Electromagnetic compatibility ; Electromagnetic interference ; ZTC Condition
• 刊名：Analog Integrated Circuits and Signal Processing
• 出版年：2016
• 出版时间：October 2016
• 年：2016
• 卷：89
• 期：1
• 页码：45-59
• 全文大小：3,718 KB
• 刊物类别：Engineering
• 刊物主题：Circuits and Systems
  Electronic and Computer Engineering
  Signal,Image and Speech Processing
  
• 出版者：Springer Netherlands
• ISSN：1573-1979
• 卷排序：89

文摘

Electromagnetic interference (EMI) can significantly degrades the performance of analog circuits, including voltage and current references, especially due to their limited power supply rejection. An EMI resistant MOSFET-only voltage reference is herein proposed, based on the MOSFET zero temperature coefficient (ZTC) vicinity condition. The ZTC condition is analytically derived through a continuous MOSFET model that is valid from weak to strong inversion, also a design methodology is presented. The final circuit is designed in a 130 nm process and occupies around 0.0075 mm\(^{2}\) of silicon area while consuming just 10.3 \(\upmu\)W. Post-layout simulations present a 395 mV reference voltage (\(V_{REF}\)) with a effective temperature coefficient (\(TC_{eff}\)) of 146 ppm/°C, for a temperature range from −55 to +125 °C. A 4 dBm (1 \(V_{pp}\) amplitude) EMI source injected into the power supply, according to direct power injection standard [1], results in a maximum DC Shift and peak-to-peak ripple of −1.7 % and 35.8 m\(V_{pp}\), respectively. The proposed voltage reference has already been fabricated and is under preliminary measurements, presenting a maximum variation of 21 mV for a 600 mV minimum supply.