Material Characterization of Ge1?em class="a-plus-plus">x Sn x Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications

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• 作者：Aboozar Mosleh (1) (2)
  Seyed Amir Ghetmiri (1) (2)
  Benjamin R. Conley (1) (2)
  Michael Hawkridge (3)
  Mourad Benamara (3)
  Amjad Nazzal (4)
  John Tolle (5)
  Shui-Qing Yu (2)
  Hameed A. Naseem (2)
  
• 关键词：Germanium alloys ; semiconductor growth ; silicon ; pseudomorphic growth ; CVD ; GeSn
• 刊名：Journal of Electronic Materials
• 出版年：2014
• 出版时间：April 2014
• 年：2014
• 卷：43
• 期：4
• 页码：938-946
• 全文大小：2,121 KB
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• 作者单位：Aboozar Mosleh (1) (2)
  Seyed Amir Ghetmiri (1) (2)
  Benjamin R. Conley (1) (2)
  Michael Hawkridge (3)
  Mourad Benamara (3)
  Amjad Nazzal (4)
  John Tolle (5)
  Shui-Qing Yu (2)
  Hameed A. Naseem (2)
  
  1. MicroElectronics-Photonics Program, University of Arkansas, Fayetteville, AR, 72701, USA
  2. Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
  3. Institute for Nano Science and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
  4. Division of Engineering and Physics, Wilkes University, Wilkes-Barre, PA, 18766, USA
  5. ASM, 3440 East University Drive Phoenix, Phoenix, AR, 85034, USA
  
• ISSN：1543-186X

文摘

High-quality compressive-strained Ge1?em class="a-plus-plus">x Sn x /Ge films have been deposited on Si(001) substrate using a mainstream commercial chemical vapor deposition reactor. The growth temperature was kept below 450°C to be compatible with Si complementary metal–oxide–semiconductor processes. Germanium tin (Ge1?em class="a-plus-plus">x Sn x ) layers were grown with different Sn composition ranging from 0.9% to 7%. Material characterizations, such as secondary-ion mass spectrometry, Rutherford backscattering spectrometry, and x-ray diffraction analysis, show stable Sn incorporation in the Ge lattice. Comparison of the Sn mole fractions obtained using these methods shows that the bowing factor of 0.166?nm (in Vegard’s law) is in close agreement with other experimental data. High-resolution transmission electron microscopy and atomic force microscopy results show that the films have started to relax through the formation of misfit and threading dislocations. Raman spectroscopy, ellipsometry, and photoluminescence (PL) techniques are used to study the structural and optical properties of the films. Room-temperature PL of the films shows that 7% Sn incorporation in the Ge lattice results in a decrease in the direct bandgap of Ge from 0.8?eV to 0.56?eV.