High-performance heterogeneous complementary inverters based on n-channel MoS₂ and p-channel SWCNT transistors

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• 作者：Zhixin Li ; Dan Xie ; Ruixuan Dai ; Jianlong Xu ; Yilin Sun ; Mengxing Sun…
• 关键词：heterogeneous inverter ; MoS2 ; single ; walled carbon ; nanotube (SWCNT) ; high voltage gain ; electrical properties
• 刊名：Nano Research
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：10
• 期：1
• 页码：276-283
• 全文大小：
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Nanotechnology; Materials Science, general; Atomic/Molecular Structure and Spectra; Condensed Matter Physics; Biotechnology; Biomedicine, general;
• 出版者：Tsinghua University Press
• ISSN：1998-0000
• 卷排序：10

文摘

Heterogeneous complementary inverters composed of bi-layer molybdenum disulfide (MoS₂) and single-walled carbon-nanotube (SWCNT) networks are designed, and n-type MoS₂/p-type SWCNT inverters are fabricated with a backgated structure. Field-effect transistors (FETs) based on the MoS2 and SWCNT networks show high electrical performance with large ON/OFF ratios up to 106 and 105 for MoS₂ and SWCNT, respectively. The MoS2/SWCNT complementary inverters exhibit V_in-V_out signal matching and achieve excellent performances with a high peak voltage gain of 15, a low static-power consumption of a few nanowatts, and a high noise margin of 0.45VDD, which are suitable for future logic-circuit applications. The inverter performances are affected by the channel width-to-length ratios (W/L) of the MoS₂-FETs and SWCNT-FETs. Therefore, W/L should be optimized to achieve a tradeoff between the gain and the power consumption.