Temperature compensated and gated CMOS ring oscillator for time-to-digital converter application

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• 作者：Jin Wu ; Lingku Chang ; Wenbo Li ; Lixia Zheng…
• 关键词：Voltage ; controlled oscillator ; Time ; to ; digital converters ; Temperature compensation ; Gated ; Low power
• 刊名：Analog Integrated Circuits and Signal Processing
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：90
• 期：3
• 页码：513-521
• 全文大小：
• 刊物类别：Engineering
• 刊物主题：Circuits and Systems; Electrical Engineering; Signal,Image and Speech Processing;
• 出版者：Springer US
• ISSN：1573-1979
• 卷排序：90

文摘

This paper presents a CMOS voltage controlled ring oscillator with temperature compensation for low power time-to-digital converters (TDCs). In order to maintain the oscillation frequency stable, a novel compensation circuit is proposed through adaptively sensing temperature variations. This design has been implemented in TSMC 0.35 μm CMOS standard process with an active area of under 0.039 mm2. Experimental results show that the clock frequency is around 159.0 MHz only with a power consumption of 550 μA. As respective to the room temperature the maximum frequency variation is between −3.46 and +3.08 % under temperature range of −40 to 85 °C. The bit error time induced by clock jitter is limited within 4.8 % in the whole clock period, and the differential nonlinearity of the TDC is less than 0.408 LSB.