Iron oxide grown by low-temperature atomic layer deposition
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- 作者：Seenivasan Selvaraj ; Hee Moon ; Ju-Young Yun…
- 关键词：Atomic Layer Deposition ; Precursor ; Bis[bis(trimethylsilyl)amide]iron ; Hematite ; Thin Film ; Iron Oxide
- 刊名：Korean Journal of Chemical Engineering
- 出版年：2016
- 出版时间：December 2016
- 年：2016
- 卷：33
- 期：12
- 页码：3516-3522
- 全文大小：
- 刊物类别：Chemistry and Materials Science
- 刊物主题：Industrial Chemistry/Chemical Engineering; Catalysis; Materials Science, general; Biotechnology;
- 出版者：Springer US
- ISSN：1975-7220
- 卷排序：33
文摘
Atomic layer deposition (ALD) is a promising technology for fabricating conformal thin films of atomlevel thickness with chemical composition control over a variety of structures. This paper demonstrates the ALD of iron oxide thin films using a novel iron precursor, namely, bis[bis(trimethylsilyl)amide]iron [Fe(btmsa)2] and hydrogen peroxide as an oxygen source. The growth characteristics of iron oxide were investigated by varying the deposition temperatures from 100 to 225 °C, such that the ALD growth mode was observed at 150 to 175 °C with an average growth rate of 0.035±0.005 nm/cycle. The films deposited in ALD mode exhibited highly linear film thicknesses with the number of cycles and excellent conformality over high-aspect-ratio trenches. In addition, the deposited films were extremely pure and revealed a hematite phase without any subsequent heat treatment, even if the films were deposited at low temperatures.