Study of the design optimization of AC-coupled single-sided silicon strip sensors

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• 作者：H. B. Jeon ; K. H. Kang ; H. Park ; H. J. Hyun
• 关键词：Strip sensor fabrication ; Microstrip single ; sided sensor ; Leakage current ; Design parameter
• 刊名：Journal of the Korean Physical Society
• 出版年：2015
• 出版时间：May 2015
• 年：2015
• 卷：66
• 期：10
• 页码：1451-1456
• 全文大小：1,155 KB
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• 作者单位：H. B. Jeon (1)
  K. H. Kang (1)
  H. Park (1)
  H. J. Hyun (2)
  
  1. Department of Physics, Kyungpook National University, Daegu, 702-701, Korea
  2. Pohang Accelerator Laboratory, Pohang, 790-834, Korea
  
• 刊物主题：Physics, general; Theoretical, Mathematical and Computational Physics; Particle and Nuclear Physics;
• 出版者：Springer Netherlands
• ISSN：1976-8524

文摘

The high-intensity rare-isotope accelerator, RAON, will be constructed for nuclear physics research in Korea. AC-coupled single-sided silicon strip detectors (SSSDs) are being investigated for use in the Si-CsI detector of a large acceptance multi-purpose spectrometer to measure the energies of various isotopes. To determine the optimal design, four SSSD design parameters were examined in this study, namely the ratio of p+ implant width to strip pitch (I/P), the width of the metal layer, the presence of an n+-edge field shaper (FS), and the distance between the guard-ring and sensor edge (DGS). The designed detectors were fabricated on high resistivity n-type silicon wafers of 500 μm thickness. The SSSDs had the strip pitch of 730 μm and 32 readout strips in each, and the size of the sensors was 40.0 × 25.5 mm2. In terms of the leakage current and production yield, the noise improved by up to 30%when the I/P ratio was 0.4, the metal layer was wider than the p+ implantation, and the DGS with n+-edge FS was twice the sensor thickness. The signal-to-noise ratio of the SSSD with the design parameters that provided the optimal leakage current and coupling capacitance was measured to be 29.1 using a 90Sr radioactive source and commercial electronics.