Modification of MIS structures by electron irradiation and high-field electron injection
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- 作者：D. V. Andreev ; G. G. Bondarenko…
- 刊名：Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques
- 出版年：2016
- 出版时间：March 2016
- 年：2016
- 卷：10
- 期：2
- 页码：450-454
- 全文大小：351 KB
- 刊物类别：Chemistry and Materials Science
- 刊物主题：Chemistry
Surfaces and Interfaces and Thin Films
Russian Library of Science - 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
- ISSN：1819-7094
- 卷排序：10
文摘
The change in the charge state of metal–insulator–semiconductor (MIS) structures with a two-layer silicon-dioxide–phosphosilicate-glass gate insulator upon their modification under electron irradiation and high-field electron injection is studied. A thin glass film is formed by doping a thermal SiO2 film formed on the surface of a silicon wafer with phosphorus. It is found that the negative charge accumulated in a thin film of phosphosilicate glass during high-field tunneling electron injection or electron irradiation can be used to adjust the threshold voltage and to increase the charge stability and the breakdown voltage of MIS devices. It is shown that MIS structures need to be annealed at a temperature of approximately 200°C to obtain high thermal-field stability after modification of their charge state by the electron injection or electron irradiation. It is found that the use of a two-layer silicon-dioxide–phosphosilicate-glass gate dielectric increases the average value of the charge injected into the insulator to breakdown and decreases the amount of defect structures.KeywordsMIS structureelectron radiationhigh-field injectiondielectric film