Size-controlled Si quantum dots embedded in B-doped SiN_x/Si₃N₄ superlatice for Si quantum dot solar cells

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• 作者：Xiaobo Chen ; Wen Yang ; Peizhi Yang…
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：28
• 期：2
• 页码：1322-1327
• 全文大小：
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Optical and Electronic Materials; Characterization and Evaluation of Materials;
• 出版者：Springer US
• ISSN：1573-482X
• 卷排序：28

文摘

Under the condition of the fixed Si₃N₄ layer thickness of 1.1 nm, Si-QDs embedded in B-doped SiN_x/Si₃N₄ multilayer thin films with various SiN_x layer thickness were fabricated respectively. Si-QDs with controllable and nearly uniform size were formed in SiN_x layers, and found that the optical band gap of the films can be adjusted by changing the thickness of SiN_x layer. On the basis of this, the Si-QDs/c-Si heterojunction solar cells were prepared. It is found that the larger the band gap is, the higher the cell efficiency is. The best performance device is obtained with average QD size of ~3.5 nm, which has the highest efficiency of 7.05 % compared with the other two devices. This difference is caused by the difference of the spectral response of these devices.