The effect of CdS QDs structure on the InGaP/GaAs/Ge triple junction solar cell efficiency
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- 作者：Chen-Chen Chung (1)
Binh Tinh Tran (1)
Hau-Vei Han (2)
Yen-Teng Ho (1)
Hung-Wei Yu (1)
Kung-Liang Lin (1)
Hong-Quan Nguyen (1)
Peichen Yu (2)
Hao-Chung Kuo (2)
Edward Yi Chang (1) - 关键词：CdS ; quantum dots ; triple ; junction solar cell
- 刊名：Electronic Materials Letters
- 出版年：2014
- 出版时间：March 2014
- 年：2014
- 卷：10
- 期：2
- 页码：457-460
- 全文大小：384 KB
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Binh Tinh Tran (1)
Hau-Vei Han (2)
Yen-Teng Ho (1)
Hung-Wei Yu (1)
Kung-Liang Lin (1)
Hong-Quan Nguyen (1)
Peichen Yu (2)
Hao-Chung Kuo (2)
Edward Yi Chang (1)
1. Department of Materials and Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu, 30010, Taiwan
2. Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, 30010, Taiwan - ISSN：2093-6788
文摘
This work describes optical and electrical characteristics of InGaP/GaAs/Ge triple-junction (T-J) solar cells with CdS quantum dots (QDs) fabricated by a novel chemical solution. With the anti-reflective feature at long wavelength and down-conversion at UV regime, the CdS quantum dot effectively enhance the overall power conversion efficiency more than that of a traditional GaAs-based device. Experimental results indicate that CdS quantum dot can enhance the short-circuit current by 0.33 mA/cm2, which is observed for the triple-junction solar cells with CdS QDs of about 3.5 nm in diameter. Moreover, the solar cell conversion efficiency is improved from 28.3% to 29.0% under one-sun AM 1.5 global illumination I–V measurement.