Use of Field-Effect Density Modulation to Increase ZT for Si Nanowires: A Simulation Study

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• 作者：Neophytos Neophytou ; Hossein Karamitaheri ; Hans Kosina
• 关键词：Silicon nanowires ; low ; dimensional thermoelectrics ; gated thermoelectrics ; Boltzmann transport ; thermoelectric power factor ; Seebeck coefficient
• 刊名：Journal of Electronic Materials
• 出版年：2015
• 出版时间：June 2015
• 年：2015
• 卷：44
• 期：6
• 页码：1599-1605
• 全文大小：985 KB
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• 作者单位：Neophytos Neophytou (1)
  Hossein Karamitaheri (2)
  Hans Kosina (3)
  
  1. School of Engineering, University of Warwick, Coventry, CV4 7AL, UK
  2. Department of Electrical Engineering, University of Kashan, 87317-51167, Kashan, Iran
  3. Institute for Microelectronics, Technical University of Vienna, Wien, Austria
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  Electronics, Microelectronics and Instrumentation
  Solid State Physics and Spectroscopy
  
• 出版者：Springer Boston
• ISSN：1543-186X

文摘

Modulation doping is a promising means of increasing the electrical conductivity of thermoelectric (TE) materials and achieving a high figure of merit (ZT). We compared, qualitatively and quantitatively, the TE performance of a field-effect density modulated Si nanowire channel of diameter D?=?12?nm with that of its doped counterpart, by use of self-consistent atomistic tight-binding simulations coupled to the Boltzmann transport equation. We describe the simulation model, and show that as a result of a large improvement in electrical conductivity, gating, rather than doping, can result in greater than three-fold improvement of the TE power factor. Despite the large increase in the electronic part of the thermal conductivity, the total thermal conductivity is still dominated by phonons. Thus, a ZT more than three-fold higher can also be achieved in the gated channel compared with the doped channel. Finally, we show that the power factor peak is obtained when the Fermi level resides ?em class="EmphasisTypeItalic">k _B T below the band edge, as is observed for doped channels.