The temperature dependence of the band-gap energy of the dilute oxygen ZnO x Se1−x
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- 作者：Chuan-Zhen Zhao ; Si Sang ; Tong Wei ; Sha-Sha Wang ; Ke-Qing Lu
- 刊名：Applied Physics A
- 出版年：2017
- 出版时间：February 2017
- 年：2017
- 卷：123
- 期：2
- 全文大小：
- 刊物类别：Physics and Astronomy
- 刊物主题：Condensed Matter Physics; Optical and Electronic Materials; Nanotechnology; Characterization and Evaluation of Materials; Surfaces and Interfaces, Thin Films; Operating Procedures, Materials Treatment
- 出版者：Springer Berlin Heidelberg
- ISSN：1432-0630
- 卷排序：123
文摘
The temperature dependence of the band-gap energy of the dilute oxygen ZnOxSe1−x is investigated. It is found that the band-anticrossing model can describe the temperature dependence of the band-gap energy of the dilute oxygen ZnOxSe1−x well after considering the temperature dependence and the composition dependence of the O level. It is also found the temperature dependence of the band-gap energy of ZnOxSe1−x becomes weak with increasing O content due to the influence of the weak temperature dependence of the O level. In addition, it is found that the composition dependence of the O level and the localization effect in ZnOxSe1−x should be due to the O clusters.