Band gap engineering in lead sulphur selenide (PbS1−x Se x ) thin films synthesized by chemical bath deposition method
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- 作者：Fekadu Gashaw Hone ; Francis Kofi Ampong…
- 刊名：Journal of Materials Science: Materials in Electronics
- 出版年：2017
- 出版时间：February 2017
- 年：2017
- 卷：28
- 期：3
- 页码：2893-2900
- 全文大小：
- 刊物类别：Chemistry and Materials Science
- 刊物主题：Optical and Electronic Materials; Characterization and Evaluation of Materials;
- 出版者：Springer US
- ISSN：1573-482X
- 卷排序：28
文摘
Nanocrystalline PbS1−xSex (0 ≤ x ≤ 1) thin films have been deposited on silica glass substrate by the chemical bath deposition technique. The deposited PbS1−xSex thin films were smooth and mirror-like gray in color. The films were characterized by a variety of techniques and the effect of selenium (Se) concentration analyzed. The X-ray diffraction analyses revealed that all the PbS1−xSex thin films were polycrystalline and had the face centered cubic structure. Variation in Se concentration had a significant effect on the preferred orientation of the crystallites. The lattice constant and inter planer distance increased linearly with the gradual addition of Se in the PbS1−xSex thin films. Energy dispersive X-ray analysis confirmed that all the samples have stoichiometric composition. The surface morphology of the films has been examined using scanning electron microscopy. The optical absorption spectroscopy study revealed that the optical band gap of the PbS1−xSex thin films tuned from near-infrared to visible region (1.32–1.08 eV) by simple and cost effective route.