Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy

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• 作者：Shih-Wei Lin (1)
  Yue-Han Wu (2)
  Li Chang (2)
  Chi-Te Liang (3) (4)
  Sheng-Di Lin (1)
  
  1. Department of Electronics Engineering ; National Chiao Tung University ; 1001 University Road ; Hsinchu ; 30010 ; Taiwan
  2. Department of Materials Science and Engineering ; National Chiao Tung University ; Hsinchu ; 30010 ; Taiwan
  3. Department of Physics ; National Taiwan University ; Taipei ; 10617 ; Taiwan
  4. Geballe Laboratory for Advanced Materials (GLAM) ; Stanford University ; Stanford ; CA ; 94305 ; USA
  
• 关键词：Weak anti ; localization ; Ultrathin metal films ; Pure electron ; electron dephasing
• 刊名：Nanoscale Research Letters
• 出版年：2015
• 出版时间：December 2015
• 年：2015
• 卷：10
• 期：1
• 全文大小：1,933 KB
• 参考文献：1. Hikami, S, Larkin, AI, Nagaoka, Y (1980) Spin-orbit interaction and magnetoresistance in two-dimensional random system. Prog Theor Phys. 63: pp. 707 CrossRef
  2. Baker, AMR, Alexander-Webber, JA, Altebaeumer, T, Janssen, TJBM, Tzalenchuk, A, Lara-Avila, S (2012) Weak localization scattering lengths in epitaxial, and CVD graphene. Phys Rev B. 86: pp. 235441 CrossRef
  3. Steiberg, H, Lalo毛, J-B, Fatemi, V, Moodera, JS, Jarillo-Herrero, P (2011) Electrically tunable surface-to-bulk coherent coupling in topological insulator thin films. Phys Rev B. 84: pp. 233101 CrossRef
  4. Lang, M, He, L, Kou, X, Upadhyaya, P, Fan, Y, Chu, H (2013) Competing weak localization and weak antilocalization in ultrathin topological insulators. Nano Lett. 13: pp. 48 CrossRef
  5. Neumaier, D, Wagner, K, Gei脽ler, S, Wurstbauer, U, Sadowski, J, Wegscheider, W (2007) Weak localization in ferromagnetic (Ga, Mn)As nanostructures. Phys Rev Lett. 99: pp. 116803 CrossRef
  6. Kallaher, RL, Heremans, JJ (2009) Spin and phase coherence measured by antilocalization in n-InSb thin films. Phys Rev B. 79: pp. 075322 CrossRef
  7. Kallaher, RL, Heremans, JJ, Goel, N, Chung, SJ, Santos, MB (2010) Spin-orbit interaction determined by antilocalization in an InSb quantum well. Phys Rev B. 81: pp. 075303 CrossRef
  8. Ebisawa, H, Maekawa, S, Fukuwama, H (1983) Pair breaking parameter of two-dimensional dirty superconductors. Solid State Commun. 45: pp. 75 CrossRef
  9. Gordon, JM, Lobb, CJ, Tinkham, M (1984) Divergent phase-breaking rate in aluminum films from magnetoresistance measurements. Phys Rev B. 29: pp. 5232 CrossRef
  10. Gordon, JM, Goldman, AM (1986) Electron inelastic scattering in aluminum films and wires at temperatures near the superconducting transition. Phys Rev B. 34: pp. 1500 CrossRef
  11. Shinozaki, B, Kawaguti, T, Fujimori, Y (1986) Magnetoresistance near superconducting transition temperature of aluminum films. J Phys Soc Jpn. 55: pp. 2364 CrossRef
  12. Santhanam, P, Prober, DE (1984) Inelastic electron scattering mechanisms in clean aluminum films. Phys Rev B. 29: pp. 3733 CrossRef
  13. Shinozaki, B, Kawaguti, T, Fujimori, Y (1984) Localization and interaction effects in weakly localized region in aluminum films. J Phys Soc Jpn. 53: pp. 3303 CrossRef
  14. Santhanam, P, Wind, S, Prober, DE (1987) Localization, superconducting fluctuations, and superconductivity in thin films and narrow wires of aluminum. Phys Rev B. 35: pp. 3188 CrossRef
  15. Maki, K (1968) Critical fluctuation of the order parameter in a superconductor. I. Prog Theor Phys. 40: pp. 193 CrossRef
  16. Thompson, RS (1970) Microwave, flux flow, and fluctuation resistance of dirty type-II superconductors. Phys Rev B. 1: pp. 327 CrossRef
  17. Santos, JMBLd, Abrahams, E (1985) Superconducting fluctuation conductivity in a magnetic field in two dimensions. Phys Rev B 31: pp. 172 CrossRef
  18. Larkin, AI (1980) Reluctance of two-dimensional systems. JETP Lett. 31: pp. 219
  19. Bergmann, G (1984) Quantum corrections to the resistance in two-dimensional disordered superconductors above T c : Al, Sn, and amorphous Bi0.9Tl0.1 films. Phys Rev B 29: pp. 6114 CrossRef
  20. Cho, AY, Dernier, PD (1978) Single-crystal-aluminum Schottky-barrier diodes prepared by molecular-beam epitaxy (MBE) on GaAs. J Appl Phys. 49: pp. 3328 CrossRef
  21. Ludeke, R, Chang, LL, Esaki, L (1973) Molecular beam epitaxy of alternating metal-semiconductor films. Appl Phys Lett. 23: pp. 201 CrossRef
  22. Lin, S-W, Wu, J-Y, Lin, S-D, Lo, M-C, Lin, M-H, Liang, C-T (2013) Characterization of single-crystalline aluminum thin film on (100) GaAs substrate. Jpn J Appl Phys. 52: pp. 045801 CrossRef
  23. Ruffino, F, Grimaldi, MG (2010) Island-to-percolation transition during the room-temperature growth of sputtered nanoscale Pd films on hexagonal SiC. J Appl Phys. 107: pp. 074301 CrossRef
  24. Altshuler, BL, Aronov, AG, Khmelnitsky, DE (1982) Effects of electron-electron collisions with small energy transfers on quantum localization. J Phys C: Solid State Phys. 15: pp. 7367 CrossRef
  25. Vangrunderbeek, J, Haesendonck, C, Bruynseraede, Y (1989) Electron localization and superconducting fluctuations in quasi-two-dimensional Ti films. Phys Rev B. 40: pp. 7594 CrossRef
  26. Giannouri, M, Rocofyllou, E, Papastaikoudis, C, Schilling, W (1997) Weak-localization, Aslamazov-Larkin, and Maki-Thompson superconducting fluctuation effects in disordered Zr1-xRhx films above T c. Phys Rev B. 56: pp. 6148 CrossRef
  27. Breznay, NP, Kapitulnik, A (2013) Observation of the ghost critical field for superconducting fluctuations in a disordered TaN thin film. Phys Rev B. 88: pp. 104510 CrossRef
  28. Giannouri, M, Papastaikoudis, C, Rosenbaum, R (1999) Low-temperature transport properties of Nb1-xTax thin films. Phys Rev B. 59: pp. 4463 CrossRef
  29. Lu, J, Shen, B, Tang, N, Chen, DJ, Zhao, H, Liu, DW (2004) Weak anti-localization of the two-dimensional electron gas in modulation-doped AlxGa1-xN/GaN heterostructures with two subbands occupation. Appl Phys Lett. 85: pp. 3125 CrossRef
  30. Thillosen, N, Sch盲pers, T, Kaluza, N, Hardtdegen, H, Guzenko, VA (2006) Weak antilocalization in a polarization-doped AlxGa1-xN/GaN heterostructure with single subband occupation. Appl Phys Lett. 88: pp. 022111 CrossRef
  31. Thillosen, N, Caba帽as, S, Kaluza, N, Guzenko, VA, Hardtdegen, H, Sch盲pers, T (2006) Weak antilocalization in gate-controlled Al1-xGaxN/GaN two-dimensional electron gases. Phys Rev B 73: pp. 241311(R) CrossRef
  32. Minkov, GM, Sherstobitov, AA, Germanenko, AV, Rut, OE, Larionova, VA, Zvonkov, BN (2005) Antilocalization and spin-orbit coupling in the hole gas in strained GaAs/InxGa1-xAs/GaAs quantum well heterostructures. Phys Rev B. 71: pp. 165312 CrossRef
  33. Minkov, GM, Germanenko, AV, Rut, OE, Sherstobitov, AA, Golub, LE, Zvonkov, BN (2004) Weak antilocalization in quantum wells in tilted magnetic fields. Phys Rev B. 70: pp. 155323 CrossRef
  34. Studenikin, SA, Coleridge, PT, Ahmed, N, Poole, PJ, Sachrajda, A (2003) Experimental study of weak antilocalization effects in a high-mobility InxGa1-xAs/InP quantum well. Phys Rev B. 68: pp. 035317 CrossRef
  35. Millo, O, Klepper, SJ, Keller, MW, Prober, DE, Xiong, S, Stone, AD (1990) Reduction of the mesoscopic conductance-fluctuation amplitude in GaAs/AlGaAs heterojunctions due to spin-orbit scattering. Phys Rev Lett. 65: pp. 1494 CrossRef
  36. Lin, JJ, Bird, JP (2002) Recent experimental studies of electron dephasing in metal and semiconductor mesoscopic structures. J Phys: Condens Matter. 14: pp. R501
  37. Lee, PA, Stone, AD, Fukuyama, H (1987) Universal conductance fluctuations in metals: effects of finite temperature, interactions, and magnetic field. Phys Rev B. 35: pp. 1039 CrossRef
  38. Li, Z, Chen, T, Pan, H, Song, F, Wang, B, Han, J (2012) Two-dimensional universal conductance fluctuations and the electron-phonon interaction of surface states in Bi2Te2Se microflakes. Sci Rep. 2: pp. 595
  39. Kahnoj, SS, Touski, SB, Pourfath, M (2014) The effect of electron-electron interaction induced dephasing on electronic transport in graphene nanoribbons. Appl Phys Lett. 105: pp. 103502 CrossRef
  40. Weber, B, Ryu, H, Matthias Tan, Y-H, Kilmeck, G, Simmons, MY (2014) Limits to metallic conduction in atomic-scale quasi-one-dimensional silicon wires. Phys Rev Lett. 113: pp. 246802 CrossRef
  
• 刊物主题：Nanotechnology; Nanotechnology and Microengineering; Nanoscale Science and Technology; Nanochemistry; Molecular Medicine;
• 出版者：Springer US
• ISSN：1556-276X

文摘

We have successfully grown ultrathin continuous aluminum film by molecular beam epitaxy. This percolative aluminum film is single crystalline and strain free as characterized by transmission electron microscopy and atomic force microscopy. The weak anti-localization effect is observed in the temperature range of 1.4 to 10 K with this sample, and it reveals that, for the first time, the dephasing is purely caused by electron-electron inelastic scattering in aluminum.