The properties of AlGaN films and AlGaN/GaN heterostructures grown on (11[`2]011\bar{2}0) sapphire substrates

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• 作者：Wei-Tsai Liao ; Jyh-Rong Gong ; Shih-Wei Lin ; Cheng-Liang Wang ; Keh-Chang Chen ; Jen-Bin Shi ; Sheng-Yueh Chang and Kuan-Jiuh Lin
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2006
• 出版时间：October, 2006
• 年：2006
• 卷：17
• 期：10
• 页码：847-850
• 全文大小：221 KB
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  
• 出版者：Springer New York
• ISSN：1573-482X

文摘

Al _x Ga_1-x N films and Al _x Ga_1-x N/GaN heterostructures were prepared on the ( 11[`2] 011\bar{2} 0 ) sapphire substrates at elevated temperatures by alternate supply of trimethylgallium (TMG)/trimethylaluminum (TMA) and ammonia (NH<sub>3</sub>) in an inductively heated quartz reactor. X-ray studies reveal the monocrystalline nature of these Al-containing structures. The results of absorption measurements of the Al <sub>x</sub> Ga<sub>1-x</sub> N films exhibit clear cut-off energies of the films. Based on the investigations of transmission electron microscopy (TEM), Al <sub>x</sub> Ga<sub>1-x</sub> N films and Al <sub>x</sub> Ga<sub>1-x</sub> N/GaN structures were found to deposit on the ( 11[`2]011\bar{2}0 ) sapphire substrates with < 0001 > _AlGaN and $ being parallel to $ and $ , respectively.