Surface morphological instability of silicon (100) crystals under microwave ion physical etching

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• 作者：R. K. Yafarov ; V. Ya. Shanygin
• 刊名：Physics of the Solid State
• 出版年：2016
• 出版时间：February 2016
• 年：2016
• 卷：58
• 期：2
• 页码：360-363
• 全文大小：219 KB
• 参考文献：1.K. Oura, V. G. Lifshits, A. A. Saranin, A. V. Zotov, and M. Katayama, Introduction to Surface Physics (Nauka, Moscow, 2006) [in Russian].
  2.V. Ya. Shanygin and R. K. Yafarov, Semiconductors 47 (4), 469 (2013).CrossRef ADS
  3. VLSI Technology, Ed. by S. Sze (McGraw-Hill, New York, 1983 Mir, Moscow, 1986), Vol. 1.
  4.R. K. Yafarov and S. A. Klimova, Russ. Microelectron. 43 [!](4), 299 (2014).CrossRef
  5.R. K. Yafarov, Physics of Microwave Vacuum-Plasma Nanotechnologies (Fizmatlit, Moscow, 2009) [in Russian].
  6.S. I. Matyukhin and K. Yu. Frolenkov, Kondens. Sredy Mezhfaznye Granitsy 5 (2), 216 (2003).
  7.N. N. Ledentsov, V. M. Ustinov, V. A. Shchukin, P. S. Kop’ev, Zh. I. Alferov, and D. Bimberg, Semiconductors 32 (4), 343 (1998).CrossRef ADS
  
• 作者单位：R. K. Yafarov (1)
  V. Ya. Shanygin (1)
  
  1. Saratov Branch, Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Zelenaya ul. 38, Saratov, 410019, Russia
  
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Solid State Physics and Spectroscopy
  Russian Library of Science
  
• 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
• ISSN：1090-6460

文摘

This paper presents the results of studies of the dynamics of relaxation modification of the morphological characteristics of atomically clean surfaces of silicon (100) crystals with different types of conductivity after microwave ion physical etching in an argon atmosphere. For the first time, the effect of the electronic properties on the morphological characteristics and the surface free energy of silicon crystals is experimentally shown and proven by physicochemical methods.