Low energy selective etching of metal films in oxygen-containing high-density argon plasma
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- 作者：I. I. Amirov ; M. O. Izyumov ; V. V. Naumov
- 刊名：Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques
- 出版年：2016
- 出版时间：July 2016
- 年：2016
- 卷：10
- 期：4
- 页码：855-859
- 全文大小：565 KB
- 刊物类别：Chemistry and Materials Science
- 刊物主题：Chemistry
Surfaces and Interfaces and Thin Films
Russian Library of Science - 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
- ISSN：1819-7094
- 卷排序：10
文摘
The results of investigating the influence of the ion energy (Ei < 200 eV) on the etching of nanoscale Cu, Pt, Ta, and Ti films in an oxygen-containing high-density argon plasma of low-pressure (P < 0.4 Pa) inductive high-frequency (HF) discharges are presented. It is demonstrated that, in Ar plasma, the selective etching of metal films is achieved at ion energies close to the sputtering threshold. The selectivity of Cu, Pt, and Ta etching with respect to Ti etching increases sharply in Ar/O2 plasma with a small (less than 5%) oxygen addition. Depending on the energy of incident Ar+ ions, the yields of Ta, Pt, and Cu sputtering in Ar plasma are in good agreement with semiempirical calculations.Keywordsdense argon plasmaion-plasma etching of metalsselectivitysputtering yield