Self-Rectifying Resistive Switching Memory with Ultralow Switching Current in Pt/Ta₂O₅/HfO_2-x /Hf Stack

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• 作者：Haili Ma ; Jie Feng ; Hangbing Lv ; Tian Gao ; Xiaoxin Xu…
• 关键词：RRAM ; Crossbar ; Leakage current issue ; Self ; rectifying
• 刊名：Nanoscale Research Letters
• 出版年：2017
• 出版时间：December 2017
• 年：2017
• 卷：12
• 期：1
• 全文大小：2163KB
• 刊物主题：Nanotechnology; Nanotechnology and Microengineering; Nanoscale Science and Technology; Nanochemistry; Molecular Medicine;
• 出版者：Springer US
• ISSN：1556-276X
• 卷排序：12

文摘

In this study, we present a bilayer resistive switching memory device with Pt/Ta₂O₅/HfO_2-x/Hf structure, which shows sub-1 μA ultralow operating current, median switching voltage, adequate ON/OFF ratio, and simultaneously containing excellent self-rectifying characteristics. The control sample with single HfO_2-x structure shows bidirectional memory switching properties with symmetrical I–V curve in low resistance state. After introducing a 28-nm-thick Ta₂O₅ layer on HfO_2-x layer, self-rectifying phenomena appeared, with a maximum self-rectifying ratio (RR) of ~4 × 103 observed at ±0.5 V. Apart from being a series resistance for the cell, the Ta₂O₅ rectifying layer also served as an oxygen reservoir which remains intact during the whole switching cycle.