Bi4Si3O12 thin films for scintillator applications

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• 作者：J. A. Rincón-López ; D. A. Fernández-Benavides ; A. L. Giraldo-Betancur…
• 刊名：Applied Physics A: Materials Science & Processing
• 出版年：2016
• 出版时间：April 2016
• 年：2016
• 卷：122
• 期：4
• 全文大小：2,115 KB
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• 作者单位：J. A. Rincón-López (1) (2)
  D. A. Fernández-Benavides (2)
  A. L. Giraldo-Betancur (2)
  B. Cruz-Muñoz (1)
  H. Riascos (1)
  J. Muñoz-Saldaña (2)
  
  1. Universidad Tecnológica de Pereira, Cra 27 No 10-02, Pereira, 660003, Risaralda, Colombia
  2. Materials Science and Engineering, Unidad Queretaro, Centro de Investigación y de Estudios Avanzados del IPN, Libramiento Norponiente No. 2000, Fracc. Real de Juriquilla, 76230, Queretaro, Qro., Mexico
  
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Condensed Matter
  Optical and Electronic Materials
  Nanotechnology
  Characterization and Evaluation Materials
  Surfaces and Interfaces and Thin Films
  Operating Procedures and Materials Treatment
  
• 出版者：Springer Berlin / Heidelberg
• ISSN：1432-0630

文摘

Bismuth silicate Bi₄Si₃O₁₂ or BSO thin films were synthesized by pulsed laser deposition and a subsequent annealing treatment from a Bi–Fe–O and compared with films obtained with a pure Bi₂O₃ target. Bi–Fe–O amorphous thin films of different thicknesses were deposited on silicon substrates at room temperature and subsequently heat treated at 800 °C at different times to study the phase transformations, keeping in all steps a constant oxygen atmosphere. After annealing, Bi–Si–O crystalline phases are formed in all cases with different synthesis kinetics. The Bi–Fe–O target clearly increases the synthesis kinetic of a textured BSO phase having a dissociation and precipitation of homogeneously distributed Fe₂O₃ particles in the BSO matrix. The key aspects to obtain the Bi₄Si₃O₁₂ stoichiometric phase are both the film thickness and the heat treatment time to allow the reaction between the Bi₂O₃ from the target and the SiO₂ obtained after the oxidation of the substrate. A deposition time of Bi–Fe–O for 120 and 30 min annealing fulfills the conditions to obtain the Bi₄Si₃O₁₂ stoichiometric composition and thus scintillation performance. The scintillation properties were measured by a fluorescence spectrophotometry. The stoichiometric Bi₄Si₃O₁₂ samples show that under 260 nm excitation the material exhibits a peak emission at 466.6 nm. These Bi₄Si₃O₁₂ thin films crystallize in eulytite phase with cubic structure (a = b = c = 10.291 Å). The phase content was obtained by Rietveld analysis of X-ray diffraction patterns.