Impact of TID on response to pulsed X-ray irradiation in the bipolar operational amplifier
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- 作者：RuiBin Li ; GuiZhen Wang ; Wei Chen ; Qiang Ma…
- 关键词：TID ; pulsed X ; ray irradiation ; operational amplifier ; simulation
- 刊名：SCIENCE CHINA Technological Sciences
- 出版年：2015
- 出版时间：February 2015
- 年：2015
- 卷：58
- 期：2
- 页码：390-396
- 全文大小：1,063 KB
- 参考文献：1. Jin J, Wang X Q, Song N F, et al. Effect of 60Co-gamma radiation on the random walk error of interferometric fiber optic gyroscopes. Sci China Tech Sci, 2010, 55: 3056-060 CrossRef
2. Wang T Q, Xiao L L, Zhou B, et al. Analysis of process variations impact on the single-event transient quenching in 65 nm CMOS combinational circuits. Sci China Tech Sci, 2014, 57: 322-31 CrossRef
3. Hu T L, Lu W, Xi S B, et al. Effects of irradiation on PNP input bipolar operational amplifiers in different radiation environments and under various post-annealing treatments. Acta Phys Sin, 2013, 62: 076015-1-76015-6
4. Nicolas J H R, Dusseau L, Vaillé J R, et al. Investigation and analysis of LM124 bipolar linear circuitry response phenomenon in pulsed X-Ray environment. IEEE Trans Nucl Sci, 2010, 57: 3392-399
5. Nicolas J H R, Yago G V, Laurent D, et al. Accelerated irradiation method to study synergy effects in bipolar integrated circuits. IEEE Trans Nucl Sci, 2009, 56: 1971-977 CrossRef
6. Nicolas J-H R, Dusseau L, Julien M, et al. Impact of switched dose-rate irradiation on the response of the LM124 operational amplifier to pulsed X-Rays. IEEE Trans Nucl Sci, 2011, 58: 960-68 CrossRef
7. Nicolas J H R, Stephanie P, Julien M, et al. Study of synergism effect between TID and ATREE on the response of the LM124 operational amplifier. IEEE Trans Nucl Sci, 2011, 58: 2890-897 CrossRef
8. Yago G V, Jér?me B, Frédéric S, et al. Evaluation of ELDRS mechanisms using dose rate switching experiments on gated lateral PNP transistors. IEEE Trans Nucl Sci, 2011, 58: 2953-960 CrossRef
9. Zhai Y H, Li P, Zhang G J, et al. Radiation-resistant bipolar n-p-n transistor. Acta Phys Sin, 2011, 60: 088501-1-88501-5
10. Pershenkov V S, Maslov V B, Cherepko S V, et al. The effect of emitter junction bias on the low dose-rate radiation response of bipolar devices. IEEE Trans Nucl Sci, 1997, 44: 1840-848 CrossRef
11. Wang P P, Zhang X L, Xie X S, et al. Study on radiation of different types of bipolar transistor. Electronic Product Reliab En Testi, 2013, 31: 17-0
12. Lu W, Zheng Y Z, Wang Y Y, et al. Effects of orientation of substrate on the enhanced low-dose-rate sensitivity(ELDRS) in NPN transistors. Chinese Physics C, 2011, 35: 169-73 CrossRef
13. Donald A. Neamen, Semiconductor Physics and Devices: Basic Principles. Beijing: Publishing House of Electronics Industry, 2005. 6
14. LV M, Zhang X L, Zhang Y X, et al. Study on radiation hardness of LPNP BJTs whit different emitter depths. Microelectronics, 2013, 44: 564-67
15. Li R B, Chen W, Lin D S, et al. Study of latch-up immunization in bulk CMOS integrated circuits exposed to transient ionizing radiation. Sci China Tech Sci, 2012, 55: 3242-247 CrossRef
16. Deval Y, Lapuyade H, Fouillat P, et al. Evaluation of a design methodology dedicated to dose-rate-hardened linear integrated circuits. IEEE Trans Nucl Sci, 2002, 49: 1468-473 CrossRef - 作者单位：RuiBin Li (1)
GuiZhen Wang (1)
Wei Chen (1)
Qiang Ma (1)
Yan Liu (1)
DongSheng Lin (1)
ShanChao Yang (1)
XiaoYan Bai (1)
Chao Qi (1)
XiaoMing Jin (1)
1. State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi’an, 710024, China - 刊物类别：Engineering
- 刊物主题：Chinese Library of Science
Engineering, general - 出版者：Science China Press, co-published with Springer
- ISSN：1869-1900
文摘
Groups of a typical operational amplifier-μA741 were irradiated in a cobalt unit, each group accumulating a different total ionizing dose (TID). The results showed that the TID caused power consumption current and slew rate (SR) to degenerate in ultra-linearity, owing to a severe reduction in the current gain of the internal LPNP transistors. Pulsed X-ray irradiation experiments were carried out on the μA741 groups with different values, and the results revealed that the impact on the response to the pulsed X-ray irradiation was greater when the devices absorbed more TID. The mechanism for this is explained on the basis of the circuit construction of the μA741; the sensitive parameters of the circuit were obtained via simulation on SPICE. The simulation results additionally showed that if the sensitive parameters were optimized, the duration of interruption caused by the pulsed X-ray irradiation would be reduced significantly. In addition, several proposals are provided for hardening the devices.