Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology

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• 作者：M. Kopytko ; K. Jóźwikowski ; P. Martyniuk ; W. Gawron…
• 刊名：Journal of Electronic Materials
• 出版年：2016
• 出版时间：September 2016
• 年：2016
• 卷：45
• 期：9
• 页码：4563-4573
• 全文大小：4,006 KB
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  Electronics, Microelectronics and Instrumentation
  Solid State Physics and Spectroscopy
  
• 出版者：Springer Boston
• ISSN：1543-186X
• 卷排序：45

文摘

In this paper we present the status of HgCdTe barrier detectors with an emphasis on technological progress in metalorganic chemical vapor deposition (MOCVD) growth achieved recently at the Institute of Applied Physics, Military University of Technology. It is shown that MOCVD technology is an excellent tool for HgCdTe barrier architecture growth with a wide range of composition, donor/acceptor doping, and without post-grown annealing. The device concept of a specific barrier bandgap architecture integrated with Auger-suppression is as a good solution for high-operating temperature infrared detectors. Analyzed devices show a high performance comparable with the state-of-the-art of HgCdTe photodiodes. Dark current densities are close to the values given by “Rule 07” and detectivities of non-immersed detectors are close to the value marked for HgCdTe photodiodes. Experimental data of long-wavelength infrared detector structures were confirmed by numerical simulations obtained by a commercially available software APSYS platform. A detailed analysis applied to explain dark current plots was made, taking into account Shockley–Read–Hall, Auger, and tunneling currents.KeywordsInfrared detectorsbarrier detectorsHgCdTeMOCVD