Cu doping effect on the resistive switching behaviors of CoFe2O4 thin films

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• 作者：Zhao Xiahou ; Deok Hyeon Kim ; Hongtao Xu…
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2016
• 出版时间：March 2016
• 年：2016
• 卷：27
• 期：3
• 页码：2255-2259
• 全文大小：1,428 KB
• 参考文献：1.R. Waser, R. Dittmann, G. Staikov, K. Szot, Adv. Mater. 21, 2632–2663 (2009)CrossRef
  2.S.C. Chae, J.S. Lee, S. Kim, S.B. Lee, S.H. Chang, C. Liu, B. Kahng, H. Shin, D.W. Kim, C.U. Jung, S. Seo, M.J. Lee, T.W. Noh, Adv. Mater. 20, 1154–1159 (2008)CrossRef
  3.Z.Q. Wang, H.Y. Xu, L. Zhang, X.H. Li, J.G. Ma, X.T. Zhang, Y.C. Liu, Nanoscale 5, 4490–4494 (2013)CrossRef
  4.C.Y. Liu, J.J. Huang, C.H. Lai, C.H. Lin, Nanoscale Res. Lett. 8, 156 (2013)CrossRef
  5.F. Kurnia, C. Liu, C.U. Jung, B.W. Lee, Appl. Phys. Lett. 102, 152902 (2013)CrossRef
  6.M. Mustaqima, P. Yoo, W. Huang, B.W. Lee, C. Liu, Nanoscale Res. Lett. 10, 168 (2015)CrossRef
  7.Y. Wang, Q. Liu, S. Long, W. Wang, Q. Wang, M. Zhang, S. Zhang, Y. Li, Q. Zuo, J. Yang, M. Liu, Nanotechnology 21, 045202 (2010)CrossRef
  8.H. Zhang, L. Liu, B. Gao, Y. Qiu, X. Liu, J. Lu, R. Han, J. Kang, B. Yu, Appl. Phys. Lett. 98, 042105 (2011)CrossRef
  9.H. Zhang, B. Gao, B. Sun, G. Chen, L. Zeng, L. Liu, X. Liu, J. Lu, R. Han, J. Kang, B. Yu, Appl. Phys. Lett. 96, 123502 (2010)CrossRef
  10.J.M. Luo, S.P. Lin, Y. Zheng, B. Wang, Appl. Phys. Lett. 101, 062902 (2012)CrossRef
  11.Y.H. Do, J.S. Kwak, J.P. Hong, J. Korean Phys. Soc. 55(3), 1009–1012 (2009)
  12.M. Li, F. Zhuge, X. Zhu, K. Yin, J. Wang, Y. Liu, C. He, B. Chen, R.W. Li, Nanotechnology 21, 425202 (2010)CrossRef
  13.M.P. Horvath, J. Magn. Magn. Mater. 215–216, 171–183 (2000)CrossRef
  14.C. Jin, D.X. Zheng, P. Li, W.B. Mi, H.L. Bai, Appl. Surf. Sci. 26, 678–6813 (2012)CrossRef
  15.W. Hu, L. Zou, R. Chen, W. Xie, X. Chen, N. Qin, S. Li, G. Yang, D. Bao, Appl. Phys. Lett. 104, 143502 (2014)CrossRef
  16.U. Lüders, A. Barthélémy, M. Bibes, K. Bouzehouane, S. Fusil, E. Jacquet, J.P. Contour, J.F. Bobo, J. Fontcuberta, A. Fert, Adv. Mater. 18, 1733–1736 (2006)CrossRef
  17.G. Chen, C. Song, C. Chen, S. Gao, F. Zeng, F. Pan, Adv. Mater. 24, 3515–3520 (2012)CrossRef
  18.D.M. Jnaneshwara, D.N. Avadhani, B.D. Prasad, H. Nagabhushana, B.M. Nagabhushana, S.C. Sharma, S.C. Prashantha, C. Shivakumara, Spectrochim. Acta. A 132, 256–262 (2014)CrossRef
  19.J.S. Park, J.K. Jeong, H.J. Chung, Y.G. Mo, H.D. Kim, Appl. Phys. Lett. 92, 072104 (2008)CrossRef
  20.A. Gautam, K. Singh, K. Sen, R.K. Kotnala, M. Singh, Mater. Lett. 65, 591–594 (2011)CrossRef
  21.M. Hashim, Alimuddin, S. Kumar, B.H. Koo, S.E. Shirsath, E.M. Mohammed, J. Shah, R.K. Kotnala, H.K. Choi, H. Chung, R. Kumar, J. Alloy. Compd. 518, 11–18 (2012)CrossRef
  22.V. Kalsani, M. Schmitte, Inorg. Chem. 45, 2061–2067 (2006)CrossRef
  
• 作者单位：Zhao Xiahou (1) (2)
  Deok Hyeon Kim (2)
  Hongtao Xu (1) (2)
  Ying Li (1)
  Bo Wha Lee (2)
  Chunli Liu (2)
  
  1. Laboratory for Microstructures, School of Materials Science and Engineering, Shanghai University, 149 Yanchang Road, Shanghai, 200072, People’s Republic of China
  2. Department of Physics and Oxide Research Center, Hankuk University of Foreign Studies, Yongin, 449-471, Korea
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  
• 出版者：Springer New York
• ISSN：1573-482X

文摘

Spin-coated Cu_xCo_1−xFe₂O₄ (x = 0, 0.2, 0.4, 0.6, and 0.8) thin films were prepared on Pt/TiO₂/SiO₂/Si substrates. Pt/Cu_xCo_1−xFe₂O₄/Pt structures were fabricated to investigate the effect of Cu doping concentration on the resistive switching behaviors. Structural and morphology characterizations revealed that Cu doping improved the crystallization of the thin films as compared to undoped CoFe₂O₄. Current–voltage characterization showed that all Cu_xCo_1−xFe₂O₄ thin films showed unipolar resistance switching, but the distribution range of the set voltage, reset voltage, and resistances were much reduced by Cu doping. Clear improvement in the stability of these parameters started to appear with x = 0.4, and the optimized performance was observed in the Pt/Cu_0.6Co_0.4Fe₂O₄/Pt structure. The improved stability of the switching parameters was attributed to the enhancement of hopping process between the Fe ions and the Cu ions in the spinel lattice. Our results indicated that appropriate adjustment of the doping elements in oxides can be a feasible approach in achieving stable resistance switching memory devices.