Effect of a Cooling Step Treatment on a High-Voltage GaN LED During ICP Dry Etching
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- 作者：Yen-Sheng Lin ; Sheng-Yu Hsiao ; Chun-Lung Tseng…
- 关键词：High ; voltage GaN light ; emitting diode ; high ; resolution transmission electron microscopy ; dislocation density ; cooling step treatment ; inductivity coupled plasma
- 刊名：Journal of Electronic Materials
- 出版年：2017
- 出版时间：February 2017
- 年：2017
- 卷：46
- 期：2
- 页码：941-946
- 全文大小：
- 刊物类别：Chemistry and Materials Science
- 刊物主题：Optical and Electronic Materials; Characterization and Evaluation of Materials; Electronics and Microelectronics, Instrumentation; Solid State Physics;
- 出版者：Springer US
- ISSN：1543-186X
- 卷排序：46
文摘
In this study, a lower dislocation density for a GaN surface and a reduced current path are observed at the interface of a SiO2 isolation sidewall, using high-resolution transmission electron microscopy. This is grown using a 3-min cooling step treatment during inductivity coupled plasma dry etching. The lower forward voltage is measured, the leakage current decreases from 53nA to 32nA, and the maximum output power increases from 354.8 W to 357.2 W for an input current of 30 mA. The microstructure and the optoelectronic properties of high-voltage light-emitting-diodes is proven to be affected by the cooling step treatment, which allows enough time to release the thermal energy of the SiO2 isolation well.