Amorphous LaZnSnO thin films by a combustion solution process and application in thin film transistors

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• 作者：Jun Li ; Chuan-Xin Huang ; Yi-Zhou Fu ; Jian-Hua Zhang…
• 关键词：solution process ; oxide semiconductor ; thin film transistor
• 刊名：Electronic Materials Letters
• 出版年：2016
• 出版时间：January 2016
• 年：2016
• 卷：12
• 期：1
• 页码：76-81
• 全文大小：1,106 KB
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• 作者单位：Jun Li (1) (2)
  Chuan-Xin Huang (1)
  Yi-Zhou Fu (1)
  Jian-Hua Zhang (2)
  Xue-Yin Jiang (1)
  Zhi-Lin Zhang (1) (2)
  
  1. School of Material Science and Engineering, Shanghai University, Jiading, Shanghai, 201800, People’s Republic of China
  2. Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai, 200072, People’s Republic of China
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Condensed Matter Physics
  Electronics, Microelectronics and Instrumentation
  Optical and Electronic Materials
  Thermodynamics
  Characterization and Evaluation of Materials
  
• 出版者：The Korean Institute of Metals and Materials, co-published with Springer Netherlands
• ISSN：2093-6788

文摘

Amorphous LaZnSnO thin films with different La doping concentration are prepared by a combustion solution process and the electrical performances of thin film transistors (TFTs) are investigated. The influence of La content on the structure, oxygen vacancies, optical and electrical performance of LaZnSnO thin films are investigated. At an appropriate amount of La doping (15 mol.%), LaZnSnO-TFT shows a superior electrical performance including a mobility of 4.2 cm2/V s, a subthreshold swing of 0.50 V/decade and an on/off current ratio of 1.9 × 107. The high performance LaZnSnO-TFT is attributed to the better interface between SiO₂ and LaZnSnO channel layer and the suppression of oxygen vacancies by optimizing La content. It suggests that La doping can be a useful technique for fabricating high performance solution-processed oxide TFTs.