Effect of O₂ plasma treatment on density-of-states in a-IGZO thin film transistors

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• 作者：Xingwei Ding ; Fei Huang ; Sheng Li ; Jianhua Zhang&#8230
• 关键词：thin film transistors ; oxygen plasma treatment ; density ; of ; states ; a ; IGZO
• 刊名：Electronic Materials Letters
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：13
• 期：1
• 页码：45-50
• 全文大小：
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Optical and Electronic Materials; Condensed Matter Physics; Nanotechnology and Microengineering; Characterization and Evaluation of Materials; Nanotechnology;
• 出版者：The Korean Institute of Metals and Materials
• ISSN：2093-6788
• 卷排序：13

文摘

This work reports an efficient route for enhancing the performance of amorphous InGaZnO (a-IGZO) thin film transistors (TFT). The mobility was greatly improved by about 38% by means of O₂ plasma treatment. Temperature-stress was carried out to investigate the stability and extract the parameters related to activation energy (E_a) and density-of-states (DOS). The DOS was calculated on the basis of the experimentally obtained E_a, which can explain the experimental observation. A lower activation energy (E_a, ~0.72 eV) and a smaller DOS were obtained in the O₂ plasma treatment TFT based on the temperature-dependent transfer curves. The results showed that temperature stability and electrical properties enhancements in a-IGZO thin film transistors were attributed to the smaller DOS.