Photoluminescence on cerium-doped ZnO nanorods produced under sequential atomic layer deposition–hydrothermal processes
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- 作者：J. L. Cervantes-López ; R. Rangel ; J. Espino ; E. Martínez…
- 刊名：Applied Physics A
- 出版年：2017
- 出版时间：January 2017
- 年：2017
- 卷：123
- 期：1
- 全文大小：
- 刊物类别：Physics and Astronomy
- 刊物主题：Condensed Matter Physics; Optical and Electronic Materials; Nanotechnology; Characterization and Evaluation of Materials; Surfaces and Interfaces, Thin Films; Operating Procedures, Materials Treatment
- 出版者：Springer Berlin Heidelberg
- ISSN：1432-0630
- 卷排序：123
文摘
Doped and undoped ZnO nanorod arrays were produced combining atomic layer deposition and hydrothermal processes. First, a ZnO layer with preferential orientation normal to the c-axis was grown on the substrate by means of the decomposition of diethylzinc; subsequently, the nanorod arrays were produced through solvothermal process using a solution of Zn(NO3)2 as precursor. Doped ZnO nanorods were produced using Ce(C2H3O2)3·H2O as dopant agent precursor. Undoped and Ce-doped ZnO nanorod arrays showed high-intensity photoluminescence. The doping concentration of x = 0.04 (Zn1−xCexO) displayed the highest photoluminescence. Undoped ZnO showed an intense UV peak centered at 382 nm with a narrow full wide half maximum of 33 nm. Ce-doped ZnO PL spectra contain three bands, one signal in the UV region centered at 382 nm, other centered at 467 nm in the near-green region and other one emission centered at 560 nm. The results herein exposed demonstrate the capability to produce high-quality ZnO and Zn1−xCexO films.