Poly(4-vinylphenol-co-methyl methacrylate)/titanium dioxide nanocomposite gate insulators for 6,13-bis(triisopropylsilylethynyl)-pentacene thin-film transistors

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• 作者：Xue Zhang (1)
  Ji-Ho Park (1)
  Sungkeun Baang (1)
  Jaehoon Park (1)
  Shang Hao Piao (2)
  So Hee Kim (2)
  Hyoung Jin Choi (2)
  
  1. Department of Electronic Engineering ; Hallym University ; Chuncheon ; 200-702 ; Korea
  2. Department of Polymer Science and Engineering ; Inha University ; Incheon ; 402-751 ; Korea
  
• 关键词：Solution process ; Thin ; film transistor ; Organic semiconductor ; Insulator ; Nanocomposite material
• 刊名：Journal of the Korean Physical Society
• 出版年：2014
• 出版时间：December 2014
• 年：2014
• 卷：65
• 期：11
• 页码：1956-1960
• 全文大小：374 KB
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• 刊物主题：Physics, general; Theoretical, Mathematical and Computational Physics; Particle and Nuclear Physics;
• 出版者：Springer Netherlands
• ISSN：1976-8524

文摘

Poly(4-vinylphenol-co-methyl methacrylate)/titanium dioxide (TiO2) nanocomposite insulators were fabricated for application in 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-Pn) thin-film transistors (TFTs). The capacitance of the fabricated capacitors with this nanocomposite insulator increased with increasing content of the high-dielectric-constant TiO2 nanoparticles. Nonetheless, particle aggregates, which were invariably produced in the insulator at higher TiO2 contents, augmented gate-leakage currents during device operation while the rough surface of the insulator obstructed charge transport in the conducting channel of the TIPS-Pn TFTs. These results suggest a significant effect of the morphological characteristics of nanocomposite insulators on TFT performance, as well as on their dielectric properties. Herein, the optimal particle composition was determined to be approximately 1.5 wt%, which contributed to characteristic improvements in the drain current, field-effect mobility, and threshold voltage of TIPS-Pn TFTs.