Fabrication of wafer-scale nanopatterned sapphire substrate through phase separation lithography
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- 作者：Xu Guo ; Mengyang Ni ; Zhe Zhuang ; Jiangping Dai ; Feixiang Wu…
- 刊名：Applied Physics A: Materials Science & Processing
- 出版年：2016
- 出版时间：April 2016
- 年：2016
- 卷：122
- 期：4
- 全文大小：1,821 KB
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Mengyang Ni (1) (2)
Zhe Zhuang (2) (3)
Jiangping Dai (2) (3)
Feixiang Wu (5)
Yushuang Cui (1) (2) (4)
Changsheng Yuan (1) (2) (4)
Haixiong Ge (1) (2) (4)
Yanfeng Chen (1) (2) (4)
1. Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, China
2. National Laboratory of Solid State Microstructures, Nanjing, 210093, China
3. Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China
5. Nantong TongFang Semiconductor Co., Ltd., Nantong, China
4. Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, China - 刊物类别：Physics and Astronomy
- 刊物主题：Physics
Condensed Matter
Optical and Electronic Materials
Nanotechnology
Characterization and Evaluation Materials
Surfaces and Interfaces and Thin Films
Operating Procedures and Materials Treatment - 出版者：Springer Berlin / Heidelberg
- ISSN：1432-0630
文摘
A phase separation lithography (PSL) based on polymer blend provides an extremely simple, low-cost, and high-throughput way to fabricate wafer-scale disordered nanopatterns. This method was introduced to fabricate nanopatterned sapphire substrates (NPSSs) for GaN-based light-emitting diodes (LEDs). The PSL process only involved in spin-coating of polystyrene (PS)/polyethylene glycol (PEG) polymer blend on sapphire substrate and followed by a development with deionized water to remove PEG moiety. The PS nanoporous network was facilely obtained, and the structural parameters could be effectively tuned by controlling the PS/PEG weight ratio of the spin-coating solution. 2-in. wafer-scale NPSSs were conveniently achieved through the PS nanoporous network in combination with traditional nanofabrication methods, such as O2 reactive ion etching (RIE), e-beam evaporation deposition, liftoff, and chlorine-based RIE. In order to investigate the performance of such NPSSs, typical blue LEDs with emission wavelengths of ~450 nm were grown on the NPSS and a flat sapphire substrate (FSS) by metal–organic chemical vapor deposition, respectively. The integral photoluminescence (PL) intensity of the NPSS LED was enhanced by 32.3 % compared to that of the FSS-LED. The low relative standard deviation of 4.7 % for PL mappings of NPSS LED indicated the high uniformity of PL data across the whole 2-in. wafer. Extremely simple, low cost, and high throughput of the process and the ability to fabricate at the wafer scale make PSL a potential method for production of nanopatterned sapphire substrates.