Parameter-dependent oxidation of physically sputtered Cu and the related fabrication of Cu-based semiconductor films with metallic resistivity

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• 作者：Jiangbin Su 苏江湿/a> ; Jianhua Zhang 张建勿/a> ; Yang Liu 刘阳…
• 关键词：copper ; oxidation ; high mobility semiconductor ; physical sputtering deposition ; thin film
• 刊名：Science China Materials
• 出版年：2016
• 出版时间：February 2016
• 年：2016
• 卷：59
• 期：2
• 页码：144-150
• 全文大小：658 KB
• 参考文献：1.Roy RA, Cuomo JJ, Yee DS. Control of microstructure and properties of copper films using ion-assisted deposition. J Vac Sci Technol A, 1988, 6: 1621–1626CrossRef
  2.Holber WM, Logan JS, Grabarz HJ, et al. Copper deposition by electron cyclotron resonance plasma. J Vac Sci Technol A, 1993,11: 2903–2910CrossRef
  3.Chan KY, Tou TY, Teo BS. Effects of substrate temperature on electrical and structural properties of copper thin films. Microelectron J, 2006, 37: 930–937CrossRef
  4.Choi HM, Choi SK, Aderson O, et al. Influence of film density on residual stress and resistivity for Cu thin films deposited by bias sputtering. Thin Solid Films, 2000, 358: 202–205CrossRef
  5.Balendhran S, Deng J, Ou JZ, et al. Enhanced charge carrier mobility in two-dimensional high dielectric molybdenum oxide. Adv Mater, 2013, 25: 109–114CrossRef
  6.Switzer JA, Hung CJ, Huang LY, et al. Potential oscillations during the electrochemical self-assembly of copper/cuprous oxide layered nanostructures. J Mater Res, 1998, 13: 909–916CrossRef
  7.Langmuir I. The adsorption of gases on plane surfaces of glass, mica and platinum. J Am Chem Soc, 1918, 40: 1361–1403CrossRef
  8.Su JB, Li XX, Jiang MP, et al. Layer-plus-wire growth of copper by small incident angle deposition. Mater Lett, 2013, 92: 304–307CrossRef
  9.Haynes WM. CRC Handbook of Chemistry and Physics. Boca Raton: CRC press, 2014
  10.Fuchs K. The conductivity of thin metallic films according to the electron theory of metals. Proc Camb Phil Soc, 1938, 34: 100–108CrossRef
  11.Sondheimer EH. The mean free path of electrons in metals. Adv Phys, 1952, 1: 1–42CrossRef
  12.Mayadas AF, Shatzkes M. Electrical-resistivity model for polycrystalline films: the case of arbitrary reflection at external surfaces. Phys Rev B, 1970, 1: 1382–1389CrossRef
  13.Artunc N, Öztürk ZZ. Influence of grain-boundary and surface scattering on the electrical resistivity of single-layered thin copper films. J Phys Condens Matter, 1993, 5: 559–566CrossRef
  14.Burstein E. Anomalous optical absorption limit in InSb. Phys Rev, 1954, 93: 632–633CrossRef
  15.Moss TS. The interpretation of the properties of indium antimonide. Proc Phys Soc B, 1954, 76: 775–782CrossRef
  16.Anandan S, Wen X, Yang S. Room temperature growth of CuO nanorod arrays on copper and their application as a cathode in dye-sensitized solar cells. Mater Chem Phys, 2005, 93: 35–40CrossRef
  17.Loferski JJ. Theoretical considerations governing the choice of the optimum semiconductor for photovoltaic solar energy conversion. J Appl Phys, 1956, 27: 777–784CrossRef
  18.Tanaka H, Shimakawa T, Miyata T, et al. Effect of AZO film deposition conditions on the photovoltaic properties of AZO-Cu2O heterojunctions. Appl Surf Sci, 2005, 244: 568–572CrossRef
  
• 作者单位：Jiangbin Su 苏江滨 (1) (2)
  Jianhua Zhang 张建华 (2)
  Yang Liu 刘阳 (1)
  Meiping Jiang 蒋美萍 (1)
  Lei Zhou 周磊 (1)
  
  1. School of Mathematics and Physics, Changzhou University, Changzhou, 213164, China
  2. College of Physics Science and Technology, Xiamen University, Xiamen, 361005, China
  
• 刊物类别：Materials Science, general; Chemistry/Food Science, general;
• 刊物主题：Materials Science, general; Chemistry/Food Science, general;
• 出版者：Science China Press
• ISSN：2199-4501

文摘

In this paper, we report the parameter-dependent oxidation of physically sputtered Cu and the related fabrication of Cu-based semiconductor films with metallic resistivity. It was found that various Cu-based (oxide) films such as pure Cu, Cu<sub>2sub>O, CuO films and Cu/Cu<sub>2sub>O, Cu<sub>2sub>O/CuO composite films could be obtained by simply adjusting the deposition parameters during physical sputtering deposition. The main oxygen source for the oxidation of Cu and the parameter-dependent oxidation mechanisms were explored. Further, the electrical and optical testing results show that the obtained pure Cu film and Cu/Cu<sub>2sub>O composite film both present an intriguing combination of metal and semiconductor characteristics.