Fabrication and Characterization of p-Type SnO Thin Film with High c-Axis Preferred Orientation

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• 作者：Yanli Pei ; Wuguang Liu ; Jingtao Shi ; Zimin Chen…
• 关键词：p ; Type tin monoxide (SnO) ; high c ; axis orientation ; thermal stability
• 刊名：Journal of Electronic Materials
• 出版年：2016
• 出版时间：November 2016
• 年：2016
• 卷：45
• 期：11
• 页码：5967-5973
• 全文大小：2,490 KB
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  Electronics, Microelectronics and Instrumentation
  Solid State Physics and Spectroscopy
  
• 出版者：Springer Boston
• ISSN：1543-186X
• 卷排序：45

文摘

p-Type tin monoxide (SnO) thin films with high c-axis preferred orientation have been fabricated on quartz substrate via electron-beam evaporation at 280°C. Subsequently, rapid thermal annealing (RTA) was performed in N₂ atmosphere at 400°C to 800°C. Their structural, chemical, optical, and electrical properties were investigated by x-ray diffraction analysis, ultraviolet–visible spectroscopy, scanning electron microscopy, x-ray photoelectron spectroscopy, and Hall-effect measurements. The c-axis-oriented films of Sn-rich SnO presented excellent thermal stability up to RTA at 700°C. Both the crystallization and the hole Hall mobility were enhanced with increasing RTA temperature, with Hall mobility of 16 cm2 V−1 s−1 being obtained after RTA at 700°C. It was considered that the presence of defects and low scattering from grain boundaries contributed to this high Hall mobility. RTA annealing temperature above 700°C induced chemical reaction between SnO and the quartz substrate, with a change of the film to amorphous state with Sn4+ formation.