Organometallic hybrid perovskites: structural, optical characteristic and application in Schottky diode
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- 作者：Liang Chen ; Jinxiang Deng ; Hongli Gao…
- 刊名：Journal of Materials Science: Materials in Electronics
- 出版年：2016
- 出版时间：May 2016
- 年：2016
- 卷：27
- 期：5
- 页码：4275-4280
- 全文大小：997 KB
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Jinxiang Deng (1)
Hongli Gao (1)
Qianqian Yang (1)
Guisheng Wang (1)
Le Kong (1)
Min Cui (1)
Zijia Zhang (1)
1. College of Applied Sciences, Beijing University of Technology, Beijing, 100124, China - 刊物类别：Chemistry and Materials Science
- 刊物主题：Chemistry
Optical and Electronic Materials
Characterization and Evaluation Materials - 出版者：Springer New York
- ISSN：1573-482X
文摘
CH3NH3PbI3 thin film was deposited by a dual-source evaporation system under high vacuum (~10−4 Pa). The crystallographic phase of the thin film was determined by X-ray diffraction and its perovskite structure was confirmed. The crystal of annealed perovskite film was extremely smooth and significantly larger than that of as-deposited. The optical property of the thin film was investigated in the spectral range 300–1800 nm. By analyzing the absorption coefficient (α), the optical band gap (1.58 eV) and Urbach energy (0.082 eV) were revealed. The Al/CH3NH3PbI3/ITO Schottky diode was fabricated in order to explore the potential applications of CH3NH3PbI3. The basic device parameters, barrier height and ideality factor were determined by the current–voltage (I–V) measurement. It can be found that the charge transport was governed by space-charge-limited current mechanism by studying the forward bias characteristic.