High-conductivity SiO₂-matrix B-doped Si-NC thin films by following ion-beam treatment

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• 作者：Junjun Huang ; Weiyan Wang ; Jie Yang ; Yongzhen Tan ; Wei Chen…
• 关键词：nanoparticles ; ion beam technology ; thin films ; electrical properties
• 刊名：Electronic Materials Letters
• 出版年：2016
• 出版时间：November 2016
• 年：2016
• 卷：12
• 期：6
• 页码：738-741
• 全文大小：417 KB
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Condensed Matter Physics
  Electronics, Microelectronics and Instrumentation
  Optical and Electronic Materials
  Thermodynamics
  Characterization and Evaluation of Materials
  
• 出版者：The Korean Institute of Metals and Materials, co-published with Springer Netherlands
• ISSN：2093-6788
• 卷排序：12

文摘

In this work, further ion-beam was performed on SiO₂-matrix B-doped Si-NC (SBC) thin films in order to enhance conductivity. The effect of ionbeam type on the electrical properties of SBC thin films was investigated systematically. The results indicated that the conductivities of SBC thin films were significantly improved by both argon and hydrogen ion-beam treatments, and the higher the hydrogen ion ratio, the higher the conductivity of SBC thin films. The conductivity of SBC thin films was increased from 1.82 × 10−6 S/cm to 3.2 × 10−3 S/cm with following hydrogen-ion-beam treatment. The change in conductivity of SBC thin films was most possibly resultant from the ion-beam treatment facilitating the formation of higher superficial order and lower defects. An alternative method was proposed to prepare high-conductivity SBC thin films, which may be applied to other heterogeneous thin films.