Enhanced sensing performance of nitrogen dioxide sensor based on organic field-effect transistor with mechanically rubbed pentacene active layer
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- 作者：Yanbo Zeng (1)
Wei Huang (1)
Wei Shi (1)
Junsheng Yu (1)
1. State Key Laboratory of Electronic Thin Films and Integrated Devices ; School of Optoelectronic Information ; University of Electronic Science and Technology of China ; Chengdu ; 610054 ; China - 刊名：Applied Physics A: Materials Science & Processing
- 出版年：2015
- 出版时间：March 2015
- 年：2015
- 卷：118
- 期：4
- 页码：1279-1285
- 全文大小：1,878 KB
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- 刊物主题：Physics
Condensed Matter
Optical and Electronic Materials
Nanotechnology
Characterization and Evaluation Materials
Surfaces and Interfaces and Thin Films
Operating Procedures and Materials Treatment - 出版者：Springer Berlin / Heidelberg
- ISSN：1432-0630
文摘
Organic field-effect transistor (OFET)-based nitrogen dioxide (NO2) sensors with mechanically rubbed pentacene active layer were fabricated by utilizing polystyrene as the dielectric. Compared with those of the reference device, the sensing properties, including sensitivity and response time, were significantly enhanced in OFETs with the pentacene film rubbed parallel to the source/drain electrodes, while the device with pentacene film rubbed perpendicular to the source/drain electrodes showed sensing properties lower than those of the reference device. Atomic force microscope was used to analyze the morphologies of pentacene film with or without rubbing, and much smaller grains of pentacene were observed after mechanical rubbing. Consequently, more grain boundaries which were beneficial to the diffusion of analytes were formed, and NO2 diffused to the channel of OFET with parallel rubbed pentacene would modify the hole density more effectively as the charge flow in such device was forced to travel through the rubbed pentacene.