A selector device based on graphene–oxide heterostructures for memristor crossbar applications

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• 作者：Miao Wang ; Xiaojuan Lian ; Yiming Pan ; Junwen Zeng ; Chengyu Wang…
• 刊名：Applied Physics A: Materials Science & Processing
• 出版年：2015
• 出版时间：August 2015
• 年：2015
• 卷：120
• 期：2
• 页码：403-407
• 全文大小：2,128 KB
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• 作者单位：Miao Wang (1)
  Xiaojuan Lian (1)
  Yiming Pan (1)
  Junwen Zeng (1)
  Chengyu Wang (1)
  Erfu Liu (1)
  Baigeng Wang (1)
  J. Joshua Yang (2)
  Feng Miao (1)
  Dingyu Xing (1)
  
  1. National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
  2. Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, 01003, USA
  
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Condensed Matter
  Optical and Electronic Materials
  Nanotechnology
  Characterization and Evaluation Materials
  Surfaces and Interfaces and Thin Films
  Operating Procedures and Materials Treatment
  
• 出版者：Springer Berlin / Heidelberg
• ISSN：1432-0630

文摘

Most of the potential applications of memristive devices adopt crossbar architecture for ultra-high density. One of the biggest challenges of the crossbar architecture is severe residue leakage current (sneak path) issue. A possible solution is introducing a selector device with strong nonlinear current–voltage (I-em class="EmphasisTypeItalic">V) characteristics in series with each memristor in crossbar arrays. Here, we demonstrate a novel selector device based on graphene–oxide heterostructures, which successfully converts a typical linear TaO x memristor into a nonlinear device. The origin of the nonlinearity in the heterostructures is studied in detail, which highlights an important role of the graphene–oxide interfaces.