Observation of irreversible current path in polymer dielectric using conductive atomic force microscope

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• 作者：Ji-Hoon Jung (1)
  Woo Young Kim (2)
  Do-Kyung Kim (1)
  Jin-Hyuk Kwon (1)
  Hee Chul Lee (3)
  Jin-Hyuk Bae (1)
  
  1. School of Electronics Engineering ; Kyungpook National University ; Daegu ; 702-701 ; Korea
  2. Department of Mechanical Engineering ; Korea Advanced Institute of Science and Technology (KAIST) ; Daejeon ; 305-701 ; Korea
  3. Department of Electrical Engineering ; Korea Advanced Institute of Science and Technology (KAIST) ; Daejeon ; 305-701 ; Korea
  
• 关键词：conductive AFM (CAFM) ; write ; once ; read ; many (WORM) memory ; organic memory ; particle
• 刊名：Electronic Materials Letters
• 出版年：2015
• 出版时间：March 2015
• 年：2015
• 卷：11
• 期：2
• 页码：246-251
• 全文大小：1,060 KB
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• 刊物类别：Chemistry and Materials Science
• 刊物主题：Condensed Matter Physics
  Electronics, Microelectronics and Instrumentation
  Optical and Electronic Materials
  Thermodynamics
  Characterization and Evaluation of Materials
  
• 出版者：The Korean Institute of Metals and Materials, co-published with Springer Netherlands
• ISSN：2093-6788

文摘

During the measurement of the electrical properties of a metal-polymer-metal capacitor, it was found that the capacitor exhibited write-once-read-many-times (WORM) memory behavior, even though it was made of the dielectric polymer, polystyrene. The initial low conductance state changed to a high conductance state when a threshold voltage was applied, but this final state never reverted to the initial state. This phenomenon only appeared in sub-100-nm-thick films. To understand this phenomenon, conductive atomic force microscopy (CAFM) was used. The current distribution measured with CAFM showed an irreversible current path had formed near particles in the polymer film. For reproducibility, particles were intentionally inserted into the polymer film during the fabrication of metal-polymer-metal capacitors, and the same current mechanism was found. From these results, it is concluded that the purification and cleaning process of organic devices severely affects the device characteristics. In addition, particle-insertion appears to be a promising method for fabrication low-cost and air-stable WORM type memory for various applications.