Optimizing phase and microstructure of chemical solution-deposited bismuth ferrite (BiFeO3) thin films to reduce DC leakage

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• 作者：Michelle D. Casper (1)
  Mark D. Losego (2)
  Jon-Paul Maria (1)
  
• 刊名：Journal of Materials Science
• 出版年：2013
• 出版时间：February 2013
• 年：2013
• 卷：48
• 期：4
• 页码：1578-1584
• 全文大小：327KB
• 参考文献：1. Hill NA (2000) J Phys Chem B 104:6694 dx.doi.org/10.1021/jp000114x">CrossRef
  2. Martin LW, Chu Y-H, Ramesh R (2010) Mater Sci Eng R 68:89 dx.doi.org/10.1016/j.mser.2010.03.001">CrossRef
  3. Neaton JB, Ederer C, Waghmare UV, Spaldin NA, Rabe KM (2005) Phys Rev B 71:014113 dx.doi.org/10.1103/PhysRevB.71.014113">CrossRef
  4. Yun KY, Ricinschi D, Kanashima T, Noda M, Okuyama M (2004) Jpn J Appl Phys 43:L647 dx.doi.org/10.1143/JJAP.43.L647">CrossRef
  5. Michel C, Moreau J-M, Achenbach GD, Gerson R, James WJ (1969) Solid State Commun 7:701 dx.doi.org/10.1016/0038-1098(69)90597-3">CrossRef
  6. Sosnowska I, Peterlin-Neumaier T, Steichele E (1982) J Phys C Solid State Phys 15:4835 dx.doi.org/10.1088/0022-3719/15/23/020">CrossRef
  7. Kubel F, Schmid H (1990) Acta Cryst B46:698
  8. Kiselev S, Ozerov R, Zhdanov G (1963) Sov Phys- Dokl 7:742
  9. Eerenstein W, Morrison FD, Sher F, Prieto JL, Attfield JP, Scott JF, Mathur ND (2007) Philos Mag Lett 87:249 dx.doi.org/10.1080/09500830601173053">CrossRef
  10. Yun KY, Noda M, Okuyama M (2004) J Appl Phys 96:3399 dx.doi.org/10.1063/1.1775045">CrossRef
  11. Scott JF (2008) J Phys Condens Matter 20:021001 dx.doi.org/10.1088/0953-8984/20/02/021001">CrossRef
  12. Naganuma H, Okamura S (2007) J Appl Phys 101:09M103 dx.doi.org/10.1063/1.2711279">CrossRef
  13. Kawae T, Tsuda H, Morimoto A (2008) Appl Phys Express 1:3 dx.doi.org/10.1143/APEX.1.051601">CrossRef
  14. Singh SK, Kim YK, Funakubo H, Ishiwara H (2006) Appl Phys Lett 88:14
  15. Singh SK, Ishiwara H (2006) Jpn J Appl Phys 45(4B):3194 dx.doi.org/10.1143/JJAP.45.3194">CrossRef
  16. Singh SK, Ishiwara H (2006) J Electroceram 16:553 dx.doi.org/10.1007/s10832-006-9917-x">CrossRef
  17. Béa H, Bibes M, Barthélémy A, Bouzehouane K, Jacquet E, Khodan A, Contour J-P, Fusil S, Wyczisk F, Forget A, Lebeugle D, Colson D, Viret M (2005) Appl Phys Lett 87:072508 dx.doi.org/10.1063/1.2009808">CrossRef
  18. Wang YP, Zhou L, Zhang MF, Chen XY, Liu J-M, Liu ZG (2004) Appl Phys Lett 84:1731 dx.doi.org/10.1063/1.1667612">CrossRef
  19. Ueda K, Tabata H, Kawai T (1999) Appl Phys Lett 75:555 dx.doi.org/10.1063/1.124420">CrossRef
  20. Cheng J-R, Cross LE (2003) J Appl Phys 94:5188 dx.doi.org/10.1063/1.1610802">CrossRef
  21. Uchida H, Ueno R, Funakubo H, Koda S (2004) J Appl Phys 100:014106
  22. Kothari D, Reddy VR, Gupta A, Phase DM, Lakshmi N, Deshpande SK, Awasthi AM (2007) J Phys Condens Matter 19:1 dx.doi.org/10.1088/0953-8984/19/13/136202">CrossRef
  23. Wang J, Neaton JB, Zheng H, Nagarajan V, Ogale SB, Liu B, Viehland D, Vaithyanathan V, Schlom DG, Waghmare UV, Spaldin NA, Rabe KM, Wuttig M, Ramesh R (2003) Science 299:1719 dx.doi.org/10.1126/science.1080615">CrossRef
  24. Yang SY, Zavaliche F, Mohaddes-Ardabili L, Vaithyanathan V, Schlom DG, Lee YJ, Chu YH, Cruz MP, Zhan Q, Zhao T, Ramesh R (2005) Appl Phys Lett 87:102903 dx.doi.org/10.1063/1.2041830">CrossRef
  25. Ueno R, Okaura S, Funakubo H, Saito K (2005) Jpn J Appl Phys 44:L1231 dx.doi.org/10.1143/JJAP.44.L1231">CrossRef
  26. Tian W, Vaithyanathan V, Schlom DG, Zhan Q, Yang SY, Chu YH, Ramesh R (2007) Appl Phys Lett 90:172908 dx.doi.org/10.1063/1.2730580">CrossRef
  27. Das RR, Kim DM, Baek SH, Eom CB, Zavaliche F, Yang SY, Ramesh R, Chen YB, Pan XQ, Ke X, Rzchowski MS, Streiffer SK (2006) Appl Phys Lett 88:242904 dx.doi.org/10.1063/1.2213347">CrossRef
  28. Liu Z, Liu H, Du G, Zhang J, Yao K (2006) J Appl Phys 100:21-4
  29. Hu GD, Fan SH, Yang CH, Wu WB (2008) Appl Phys Lett 92:192905 dx.doi.org/10.1063/1.2918130">CrossRef
  30. Tyholdt F, J?rgensen S, Fjellv?g H, Gunn?s AE (2005) J Mater Res 20:2127 dx.doi.org/10.1557/JMR.2005.0263">CrossRef
  31. Schwartz RW (1997) Chem Mater 9:2325 dx.doi.org/10.1021/cm970286f">CrossRef
  32. Keddie JL, Giannelis EP (1991) J Am Ceram Soc 74:2669 dx.doi.org/10.1111/j.1151-2916.1991.tb06818.x">CrossRef
  
• 作者单位：Michelle D. Casper (1)
  Mark D. Losego (2)
  Jon-Paul Maria (1)
  
  1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695, USA
  2. Department of Chemical and Biomolecular Engineering, North Carolina State University, Raleigh, NC, 27695, USA
  
• ISSN：1573-4803

文摘

Polycrystalline bismuth ferrite (BiFeO3 or BFO) thin films were prepared by chemical solution deposition to explore the impact of processing conditions including annealing temperature, percent excess bismuth, and gel drying temperature on film microstructure and properties. Incorporating 0-?% excess Bi and annealing at 550?°C in air produced stoichiometric single-phase BiFeO3 films. Deviation from this temperature yielded the bismuth-rich Bi36Fe2O57 phase at temperatures below 550?°C or the bismuth-deficient Bi2Fe4O9 phase at temperatures above 550?°C, both of which contributed to higher DC leakage. However, even single-phase BiFeO3 films produced at 550?°C show high DC leakage (~1.2?×?10??A/cm2 at 140?kV/cm) due to a porous microstructure. We have thus investigated unconventional thermal treatments that significantly increase film densification while maintaining phase purity. Under these revised thermal treatment conditions, room temperature leakage current values are reduced by three orders of magnitude to ~1.0?×?10??A/cm2 at 140?kV/cm.