Luminescence and magnetism studies of strongly quantum confined SnO2 dots

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• 作者：M. S. Inpasalini ; Aakash Singh…
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2016
• 出版时间：May 2016
• 年：2016
• 卷：27
• 期：5
• 页码：4392-4398
• 全文大小：690 KB
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• 作者单位：M. S. Inpasalini (1)
  Aakash Singh (2)
  Samrat Mukherjee (1)
  
  1. Department of Physics, National Institute of Technology, Patna, Bihar, 800005, India
  2. Department of Electronic and Communication Engineering, Birla Institute of Technology, Mesra, Ranchi, Jharkhand, 835215, India
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  
• 出版者：Springer New York
• ISSN：1573-482X

文摘

We synthesized pristine SnO₂ and 3d transition metal doped SnO₂ with generic formula (M_xSn_(1−x)O₂) where M=Co, Cr, Ni, Mn for 1 and 2 % values of x using simple co-precipitation method. Polyvinlypyrrolidone was used as a surfactant to control the particle size. The results of X-ray diffraction (XRD) revealed that all the samples possess rutile structure with no impurity phase and have particle sizes ranging from 2.1 to 2.5 nm. Transmission electron microscopy also confirms the particle size calculated by XRD. Optical emission due to defect induced by doping is observed at 470 nm together with a highly intense blue shifted near band edge emission at 313 nm. This confirms the quantum confinement present in the synthesized samples. High ferromagnetic order is observed in 2 % Ni and 1 % Cr samples up to 2 T applied field at room temperature. Most of the other samples show weaker low field ferromagnetism. The magnetism in the sample was found to purely dopant induced. The occupancy of spin at surface plays a major role in controlling the magnetic properties of the samples.