参考文献:Ghaemi, H.F., Thio, T., Grupp, D.E., Ebbesen, T.W., Lezec, H.J.: Surface plasmons enhance optical transmission through subwavelength holes. Phys. Rev. B 58(11), 6779–6782 (1998)CrossRef ADS Guo, N., Hu, W., Chen, X., Wang, L., Lu, W.: Enhanced plasmonic resonant excitation in a grating gated field-effect trasistor with supplemental gates. Opt. Exp. 21, 1606–1614 (2013)CrossRef ADS Hu, W., Wang, L., Chen, X., Guo, N., Miao, J., Yu, A., Lu, W.: Room-temperature plasmonic resonant absorption for grating-gate GaN HEMTs in far infrared terahertz domain. Opt. Quantum Electron. 45, 713–720 (2013)CrossRef Ichikawa, H., Baba, T.: Efficiency enhancement in a light-emitting diode with a two-dimensional surface grating photonic crystal. Appl. Phys. Lett. 84(4), 457–459 (2004)CrossRef ADS Kim, M.H., Schubert, M.F., Dai, Q., Kim, J.K., Schubert, E.F., Piprek, J., Park, Y.: Origin of efficiency droop in GaN-based light-emitting diodes. Appl. Phys. Lett. 91(18), 183507-1–183507-3 (2007)ADS Köck, A., Gornik, E., Hauser, M., Beinstingl, W.: Strongly directional emission from AlGaAs/GaAs lightemitting diodes. Appl. Phys. Lett. 57(22), 2327–2329 (1990)CrossRef ADS Lu, W., Zhang, T., He, S.M., Zhang, B., Li, N., Liu, S.S.: Light-emitting diodes for space applications. Opt. Quantum Electron. 41(11–13), 883–893 (2009)CrossRef Lu, C.H., Lan, C.C., Lai, Y.L., Li, Y.L., Liu, C.P.: Enhancement of green emission from InGaN/GaN multiple quantum wells via coupling to surface plasmons in a twodimensional silver array. Adv. Funct. Mater. 21(24), 4719–4723 (2011)CrossRef Miao, J., Hu, W., Jing, Y., Luo, W., Liao, L., Pan, A., Wu, S., Cheng, J., Chen, X., Lu, W.: Surface plasmon-enhanced photodetection in few layer MoS2 phototransistors with Au nanostructure arrays. Small 11(20), 2392–2398 (2015)CrossRef Mladenovski, S., Neyts, K., Pavicic, D., Werner, A., Rothe, C.: Exceptionally efficient organic light emitting devices using high refractive index substrates. Opt. Exp. 17(9), 7562–7570 (2009)CrossRef ADS Raether, H.: Surface Plasmons on Smooth Surfaces. Springer, Berlin (1988) Schubert, E.F., Gessmann, T., Kim, J.K.: Light Emitting Diodes. Wiley, New York (2005) Wang, X., Li, K., Kong, F., Zhang, Z.: Surface spherical crown arrays structure increases GaN-based LED efficiency. Opt. Quantum Electron. 45(7), 611–616 (2013)CrossRef Xi, Y., Li, X., Kim, J.K., Mont, F., Gessmann, T., Luo, H., Schubert, E.F.: Quantitative assessment of diffusivity and specularity of surface-textured reflectorsfor light extraction in light-emitting diodes. J. Vac. Sci. Technol. A 24(4), 1627–1630 (2006)CrossRef Yang, Y., Zhang, Y.H., Shen, W.Z., et al.: Semiconductor infrared up-conversion devices. Prog. Quantum Electron. 35(4), 77–108 (2011)CrossRef ADS Zhmakin, A.I.: Enhancement of light extraction from light emitting diodes. Phys. Rep. 498(4), 189–241 (2011)CrossRef ADS
作者单位:Mengyao Li (1) Honglou Zhen (1) Youliang Jing (1) Han Wang (1) Ning Li (1)
1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
刊物主题:Optics, Optoelectronics, Plasmonics and Optical Devices; Electrical Engineering; Characterization and Evaluation of Materials; Computer Communication Networks;
出版者:Springer US
ISSN:1572-817X
文摘
Efficiency of infrared quantum well light emitting diodes (LED) has been limited due to high refractive index and non-radiative recombination of LED materials. In this work, we designed two dimensional LED devices combined photonic crystal and surface plasmons and simulated internal quantum efficiency as well as light emitting efficiency using finite difference time domain method. Simulation result shows that the combination of photonic crystals and surface plasmon polarization enhances light emitting efficiency by five folds.