Analog/RF Study of Self-aligned In_0.53Ga_0.47As MOSFET with Scaled Gate Length

详细信息    查看全文

• 作者：Arash Dehzangi ; Farhad Larki ; M. F. Mohd Razip Wee…
• 关键词：Self ; aligned In0.53Ga0.47As MOSFET ; transconductance ; to ; normalized drain current ratio ; transconductance ; intrinsic voltage gain ; analog performance
• 刊名：Journal of Electronic Materials
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：46
• 期：2
• 页码：782-789
• 全文大小：
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Optical and Electronic Materials; Characterization and Evaluation of Materials; Electronics and Microelectronics, Instrumentation; Solid State Physics;
• 出版者：Springer US
• ISSN：1543-186X
• 卷排序：46

文摘

This study presents the impact of gate length scaling on analog and radio frequency (RF) performance of a self- aligned multi-gate n-type In_0.53Ga_0.47As metal oxide semiconductor field effect transistor. The device is fabricated using a self-aligned method, air-bridge technology, and 8 nm thickness of the Al₂O₃ oxide layer with different gate lengths. The transconductance-to-normalized drain current ratio (g_m/I_D) method is implemented to investigate analog parameters. Moreover, g_m and drain conductance (g_D) as key parameters in analog performance of the device are evaluated with g_m/I_D and gate length variation, where g_m and g_D are both showing enhancement due to scaling of the gate length. Early voltage (V_EA) and intrinsic voltage gain (A_V) value presents a decreasing trend by shrinking the gate length. In addition, the results of RF measurement for cut-off and maximum oscillation frequency for devices with different gate lengths are compared.