A novel method to overcome photoresist collapse with high aspect ratio structures
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- 作者：Mingyan Yu (1) (2)
Shirui Zhao (2)
Chaoqun Gao (2)
Xiaolong Guo (2)
Xinwei Xu (2)
Yunbo Shi (1)
Yupeng Jing (2)
Baoqin Chen (2) - 刊名：Microsystem Technologies
- 出版年：2014
- 出版时间：December 2014
- 年：2014
- 卷：20
- 期：12
- 页码：2185-2189
- 全文大小：965 KB
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Shirui Zhao (2)
Chaoqun Gao (2)
Xiaolong Guo (2)
Xinwei Xu (2)
Yunbo Shi (1)
Yupeng Jing (2)
Baoqin Chen (2)
1. The Higher Educational Key Laboratory for Measuring and Control Technology and Instrumentations of Heilongjiang Province, Harbin University of Science and Technology, Harbin, 150080, China
2. Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China - ISSN：1432-1858
文摘
A novel method based on electromagnetic wave (EW) was firstly proposed to dry photoresist with high aspect ratio after electron beam lithography. This method used EW to penetrate photoresist and heat the water stored between resist patterns directly, then the water evaporated with absorbing energy of EW. An array of 15,625 pillars and lines with 14.9?nm width of aspect ratio 13 and 17 respectively were dried successfully. By analyzing the heating mechanism, we demonstrated that the EW can decrease surface tension of water effectively and may be applicable for cleaning via hole and the inner wall of carbon nanotubes.