Al-doped ZnO as a switching layer for transparent bipolar resistive switching memory

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• 作者：Hyeongwoo Yu (1)
  Minho Kim (1)
  Yoonsu Kim (1)
  Jeongsup Lee (1)
  Kyoung-Kook Kim (2)
  Sang-Jun Choi (3)
  Soohaeng Cho (1)
  
• 关键词：resistive switching ; bipolar ; aluminum zinc oxide ; sputter ; transparent
• 刊名：Electronic Materials Letters
• 出版年：2014
• 出版时间：March 2014
• 年：2014
• 卷：10
• 期：2
• 页码：321-324
• 全文大小：1,895 KB
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• 作者单位：Hyeongwoo Yu (1)
  Minho Kim (1)
  Yoonsu Kim (1)
  Jeongsup Lee (1)
  Kyoung-Kook Kim (2)
  Sang-Jun Choi (3)
  Soohaeng Cho (1)
  
  1. Department of Physics, Yonsei University, Wonju, 220-710, Korea
  2. Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, 429-793, Korea
  3. System LSI, Samsung Electronics Co. Ltd., Yongin, 446-712, Korea
  
• ISSN：2093-6788

文摘

In this report, we employ an Al-doped ZnO (AZO) layer as a resistive switching layer for transparent resistive switching random access memory devices. An Indium-Tin-Oxide (ITO)/AZO/ITO/glass device exhibits a transmittance of ?0% (including a glass substrate) in the visible wavelength region and demonstrates reliable bipolar resistive switching behavior over d.c. 300 sweeping cycles with a low operation voltage and a very low variation in the switching threshold voltage. These results indicate that the AZO film is a promising transparent resistive switching layer.