Fully transparent, non-volatile bipolar resistive memory based on flexible copolyimide films

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• 作者：Hwan-Chul Yu ; Moon Young Kim ; Minki Hong ; Kiyong Nam…
• 关键词：copolyimide memory ; WORM ; bipolar ; transparent ; ReRAM
• 刊名：Electronic Materials Letters
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：13
• 期：1
• 页码：1-8
• 全文大小：
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Optical and Electronic Materials; Condensed Matter Physics; Nanotechnology and Microengineering; Characterization and Evaluation of Materials; Nanotechnology;
• 出版者：The Korean Institute of Metals and Materials
• ISSN：2093-6788
• 卷排序：13

文摘

Partially aliphatic homopolyimides and copolyimides were prepared from rel-(1′R,3S,5′S)-spiro[furan-3(2H),6′-[3]oxabicyclo[3.2.1]octane]-2,2′,4′,5(4H)-tetrone (DAn), 2,6-diaminoanthracene (AnDA), and 4,4′-oxydianiline (ODA) by varying the molar ratio of AnDA and ODA. We utilized these polyimide films as the resistive switching layer in transparent memory devices. While WORM memory behavior was obtained with the PI-A100-O0-based device (molar feed ratio of DAn : AnDA : ODA = 1 : 1 : 0), the PI-A70-O30-based device (molar feed ratio of DAn : AnDA : ODA = 1 : 0.7 : 0.3) exhibited bipolar resistive switching behavior with stable retention for 104 s. This result implies that the memory properties can be controlled by changing the polyimide composition. The two devices prepared from PI-A100-O0 and PI-A70-O30 showed over 90% transmittance in the visible wavelength range from 400 to 800 nm. The behavior of the memory devices is considered to be governed by trap-controlled, space-charge limited conduction (SCLC) and local filament formation.