Tunable far infrared detection using quantum rings-in-well intersubband photodetectors

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• 作者：R. Samadzadeh ; Mahdi Zavvari ; R. Hosseini
• 关键词：Quantum rings ; in ; well ; Tunable infrared photodetector ; Dark current ; Responsivity
• 刊名：Optical and Quantum Electronics
• 出版年：2015
• 出版时间：November 2015
• 年：2015
• 卷：47
• 期：11
• 页码：3555-3565
• 全文大小：1,135 KB
• 参考文献：Andrews, J., Jang, W.Y., Pezoa, J.E., Sharma, Y.D., Lee, S.J., Noh, S.K., Hayat, M.M., Restaino, S., Teare, S.W., Krishna, S.: Demonstration of a bias tunable quantum dots-in-a-well focal plane array. Infrared Phys. Tech. 52, 380鈥?84 (2009)CrossRef ADS
  Asadpour, S.H., Golsanamlou, Z., Soleimani, H.R.: Infrared and terahertz signal detection in a quantum dot nanostructure. Phys. E 54, 45鈥?2 (2013)CrossRef
  Barve, A., Shah, S.Y., Shao, J., Vandervelde, T.E., Shenoi, R.V., Jang, W.-Y., Krishna, S.: Reduction in dark current using resonant tunneling barriers in quantum dots-in-a-well long wavelength infrared photodetector. Appl Phys. Lett. 93, 131115 (2008)CrossRef ADS
  Bhattacharya, P., Krishna, S., Phillips, J., McCann, P.J., Namjou, K.: Carrier dynamics in self-organized quantum dots and their application to long-wavelength sources and detectors. J. Cryst. Growth 227, 27鈥?5 (2001)CrossRef ADS
  Bhattacharya, P., Stiff-Roberts, A.D., Chakrabarti, S.: Mid-infrared quantum dot photodetectors. Mid-infrared Semicond. Optoelectron. 118, 487鈥?13 (2006)CrossRef ADS
  Bhowmick, S., Huang, G., Guo, W., Lee, C.S., Bhattacharya, P., Ariyawansa, G., Perera, A.G.U.: High-performance quantum ring detector for the 1鈥? terahertz range. Appl. Phys. Lett. 96, 231103 (2010)CrossRef ADS
  Bockelmann, U., Bastard, G.: Phonon scattering and energy relaxation in two-, one-, and zero-dimensional electron gases. Phys. Rev. B 42, 8947鈥?951 (1990)CrossRef ADS
  Chuang, S.L.: Physics of Photonic Devices. Wiley, New Jersey (2009)
  Dai, J.-H., Lin, Y.-L., Lee, S.-C.: Voltage-tunable dual-band In(Ga) As quantum-ring infrared photodetector. IEEE Photon. Technol. Lett. 19, 1511鈥?513 (2007)CrossRef ADS
  Dai, J.H., Lee, J.H., Lee, S.C.: Transition mechanism of InAs quantum dot to quantum ring revealed by photoluminescence spectra. IEEE Photon. Technol. Lett. 20(16), 1372鈥?374 (2008a)CrossRef ADS
  Dai, J.H., Lee, J.H., Lin, Y.L., Lee, S.C.: In(Ga) As quantum rings for terahertz detectors. Jpn. J. Appl. Phys. 47(4), 2924鈥?926 (2008b)CrossRef ADS
  Ghadi, H., Adhikary, S., Agarwal, A., Chakrabarti, S.: Tuning in spectral response due to rapid thermal annealing on dot-in-a-well infrared photodetectors. Superlattice Microst. 65, 106鈥?12 (2014)CrossRef ADS
  Han, X., Li, J., Wu, J., Cong, G., Liu, X., Zhu, Q., Wang, Z.: Intersubband optical absorption in quantum dots-in-a-well heterostructures. J. Appl. Phys. 98, 053703 (2005)CrossRef ADS
  H枚glund, L., Holtz, P.-O., Ouattara, L., Asplund, C., Wang, Q., Almqvist, S., Petrini, E., Malm, H., Borglind, J., Smuk, S.: Quantum dots-in-a-well infrared photodetectors for long wavelength infrared detection. In: Proc. SPIE. 6401, Optical Materials in Defence Systems Technology III, pp. 640109鈥?40122. International Society for Optics and Photonics (2006). doi:10.鈥?117/鈥?2.鈥?90010
  Huang, G., Guo, W., Bhattacharya, P., Ariyawansa, G., Perera, A.G.U.: A quantum ring terahertz detector with resonant tunnel barriers. Appl. Phys. Lett. 94, 101115 (2009)CrossRef ADS
  Kargan, N.H., Farshi, M.K.M.: Effect of temperature on the current鈥搗oltage characteristics of GaAs/AlGaAs quantum cascade photodetectors. Phys. E 54, 336鈥?40 (2013)CrossRef
  Karimi, M., Abedi, K., Zavvari, M.: Resonant cavity enhanced quantum ring photodetector at 20聽渭m wavelength. Opt. Quant. Electron. 45, 1249鈥?258 (2013)CrossRef
  Karimi, M., Abedi, K., Zavvari, M.: Improving the performance of a far-infrared quantum-ring-based photodetector utilizing asymmetric multi-barrier resonant tunneling. Infrared Phys. Tech. 62, 81鈥?5 (2014)CrossRef ADS
  Kochman, B., Stiff-Roberts, A., Chakrabarti, S., Phillips, J., Krishna, S., Singh, J., Bhattacharya, P.: Absorption, carrier lifetime, and gain in InAs鈥揋aAs quantum-dot infrared photodetectors. IEEE J. Quantum Electron. 39, 459鈥?67 (2003)CrossRef ADS
  Krishna, S.: Quantum dots-in-a-well infrared photodetectors. Infrared Phys. Techol. 47, 153鈥?63 (2005)CrossRef ADS
  Gonga, L., Shua, Y., Xua, J., Zhub, Q., Wang, Z.: Numerical analysis on quantum dots-in-a-well structures by finite difference method. Superlattice Microst. 60, 311鈥?19 (2013)CrossRef ADS
  Lee, J.H., Dai, J.H., Chan, C.F., Lee, S.C.: In(Ga) As quantum ring terahertz photodetector with cutoff wavelength at 175聽渭m. IEEE Photon. Technol. Lett. 21(11), 721鈥?23 (2009)CrossRef ADS
  Li, S.S., Xia, J.B.: Electronic states of InAs/GaAs quantum ring. J. Appl. Phys. 89(6), 3434鈥?437 (2001)CrossRef ADS
  Lim, H., Zhang, W., Tsao, S., Sills, T., Szafraniec, J., Mi, K., Movaghar, B., Razeghi, M.: Quantum dot infrared photodetectors: comparison of experiment and theory. Phys. Rev. B 72, 085332 (2005)CrossRef ADS
  Lim, H., Movaghar, B., Tsao, S., Taguchi, M., Zhang, W., Quivy, A.A., Razeghi, M.: Gain and recombination dynamics of quantum-dot infrared photodetectors. Phys. Rev. B 74, 205321鈥?053218 (2006)CrossRef ADS
  Majumdar, A., Choi, K.K., Rokhinson, L.P., Reno, J.L., Tsui, D.C.: Electron transfer in voltage tunable two-color infrared photodetectors. J. Appl. Phys. 91, 4623鈥?630 (2002a)CrossRef ADS
  Majumdar, A., Choi, K.K., Rokhinson, L.P., Tsui, D.C.: Towards a voltage tunable two-color quantum-well infrared photodetector. App. Phys. Lett. 80, 538鈥?40 (2002b)CrossRef ADS
  Mir, A., Ahmadi, V.: Design and analysis of a new structure of InAs/GaAs QDIP for 8鈥?2聽渭m infrared windows with low dark current. J. Modern Optics 56(15), 1704鈥?712 (2009)MATH CrossRef ADS
  Movaghar, B., Tsao, S., Pour, S.A., Yamanaka, T., Razeghi, M.: Gain and recombination dynamics in photodetectors made with quantum nanostructures: the quantum dot in a well and the quantum well. Phys. Rev. B 78, 115320 (2008)CrossRef ADS
  Rogalski, A.: Infrared detectors: status and trends. Prog. Quantum Electron. 27, 091101 (2003)CrossRef ADS
  Rogalski, A., Antoszewski, J., Faraone, L.: Third-generation infrared photodetector arrays. J. Appl. Phys. 105, 091101 (2009)CrossRef ADS
  Ryzhii, V.: Intersubband Infrared Photodetectors, vol. 12. World Scientific, Singapore (2003)
  Shenoi, R.V., Attaluri, R.S., Siroya, A., Shao, J., Sharma, Y.D., Stintz, A., Vandervelde, T.E., Krishna, S.: Low-strain InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetector. J. Vac. Sci. Technol. B 26, 1136鈥?139 (2008)CrossRef
  Su, X., Chakrabarti, S., Bhattacharya, P., Ariyawansa, G., Perera, A.G.U.: A resonant tunneling quantum-dot infrared photodetector. IEEE J. Quantum Electron. 41(7), 974鈥?79 (2005)CrossRef ADS
  Su, X., Yang, J., Bhattacharya, P., Ariyawansa, G., Perera, A.: Terahertz detection with tunneling quantum dot intersublevel photodetector. Appl. Phys. Lett. 89(3), 031113鈥?31117 (2006)CrossRef ADS
  Towe, E., Pan, D.: Semiconductor quantum-dot nanostructures: their application in a new class of infrared photodetectors. IEEE J. Sel. Top. Quantum Electron. 6, 408鈥?21 (2000)CrossRef
  Wu, W., Dey, D., Mohseni, H.: A voltage tunable quantum dot photodetector for terahertz detection. J. Phys. D Appl. Phys. 43, 155101鈥?55106 (2010)CrossRef ADS
  Yusefli, A., Zavvari, M.: Modeling of dark current and photo-response in quantum ring intersubband photodetectors. Opt. Quant. Electron. (2015). doi:10.鈥?007/鈥媠11082-014-0116-8
  Zavvari, M., Ahmadi, V.: Quantum dot based mid-IR single photon detector with self-quenching and self-recovering operation. IEEE Electron Device Lett. 34(6), 783鈥?85 (2013)CrossRef ADS
  Zavvari, M., Ahmadi, V.: Avalanche quantum dot-in-well long wavelength infrared photodetectors: linear and Geiger mode operation. Infrared Phys. Tech. 65, 72鈥?6 (2014)CrossRef ADS
  Zavvari, M., Ahmadi, V., Mir, A., Darabi, E.: Quantum dot infrared photodetector enhanced by avalanche multiplication. Electron. Lett. 48(10), 589鈥?91 (2012)CrossRef
  Zhang, W., Lim, H., Taguchi, M., Tsao, S., Szafraniec, J., Movaghar, B., Razeghi, M.: High performance InAs quantum dot infrared photodetectors (QDIP) on InP by MOCVD. In: Quantum Sensing and Nanophotonic Devices II 2005, SPIE, pp. 326鈥?33
  
• 作者单位：R. Samadzadeh (1)
  Mahdi Zavvari (2)
  R. Hosseini (3)
  
  1. Department of Electrical Engineering, Ahar Branch, Islamic Azad University, Ahar, Iran
  2. Department of Electrical Engineering, Urmia Branch, Islamic Azad University, Urmia, Iran
  3. Department of Electrical Engineering, Khoy Branch, Islamic Azad University, Khoy, Iran
  
• 刊物主题：Optics, Optoelectronics, Plasmonics and Optical Devices; Electrical Engineering; Characterization and Evaluation of Materials; Computer Communication Networks;
• 出版者：Springer US
• ISSN：1572-817X

文摘

A novel design of quantum ring intersubband photodetectors is proposed based on quantum rings-in-well structure and its performance characteristics studied by simulation. The photon absorption occurs for intersubband transitions between quantum ring sub-bands and well states. The detector is expected to be better controlled over operating wavelength and normal incidence sensitivity in far infrared. Since the quantum well states change by electric field, the peak responsivity wavelength is voltage tunable. Our results show that increasing the bias voltage to 5 V leads to a red-shift about 4 渭m in peak wavelength. For proposed detector a quantum鈥搈echanical approach is introduced for calculation of photoconductive gain. Peak responsivity about 0.6 A/W at 位 = 20 渭m is achieved at T = 77 K using this detector. Keywords Quantum rings-in-well Tunable infrared photodetector Dark current Responsivity