The I–V zero-drift mechanism of quantum effect photodetector

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• 作者：B. Zhang ; H. D. Lu ; F. M. Guo
• 关键词：Zero ; drift ; Current–voltage characteristics ; Photovoltaic photodetector ; Photoconductive photodetector ; Quantum effect
• 刊名：Optical and Quantum Electronics
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：49
• 期：2
• 全文大小：
• 刊物主题：Optics, Lasers, Photonics, Optical Devices; Electrical Engineering; Characterization and Evaluation of Materials; Computer Communication Networks;
• 出版者：Springer US
• ISSN：1572-817X
• 卷排序：49

文摘

The zero-drift phenomenon of the I–V (current–voltage characteristics) of the quantum effect photodetector and the variation of zero-drift voltage are researched in the paper. The photovoltaic quantum dots infrared photodetector (QDIP) has the photocurrent zero-drift and the dark current oscillation. It has proved by simulated that related to the InAs QDs layer number. The photoconductive QDIP has a zero-drift that related to sweep voltage with time delay. With the time delay decreasing, the zero-drift voltage increases. When time delay is fixed, zero-drift voltage decreases at the illumination. In addition, the photodetector capacitance may be calculated by zero-drift voltage formula.