Design and Performance of (Au,Yb)/ZnS/InSe/C Heterojunctions as Plasmon Resonators, Photodetectors and Microwave Cavities
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- 作者：Najla M. Khusayfan ; Hazem K. Khanfar
- 关键词：Plasmon ; ZnS ; InSe ; terahertz ; gigahertz ; high responsivity
- 刊名：Journal of Electronic Materials
- 出版年：2017
- 出版时间：March 2017
- 年：2017
- 卷：46
- 期：3
- 页码：1650-1657
- 全文大小：
- 刊物类别：Chemistry and Materials Science
- 刊物主题：Optical and Electronic Materials; Characterization and Evaluation of Materials; Electronics and Microelectronics, Instrumentation; Solid State Physics;
- 出版者：Springer US
- ISSN：1543-186X
- 卷排序：46
文摘
In this study, we concentrate on the design and characterization of the hybrid isotype (Au, Yb)/ZnS/InSe/C devices. The thin film devices that are prepared by using the vacuum deposition technique are characterized by means of x-ray diffraction, energy dispersive x-ray analysis, optical and dielectric spectroscopy, current–voltage characteristics and impedance spectroscopy techniques. The techniques allow determining the preferred crystallinity at the interfaces, the lattice match/mismatch ratios, the atomic compositions, the energy band gap shifts, the valence and conduction band offsets, the barrier heights at the Schottky shoulders (Au/ZnS and InSe/C) of the hybrid structure and the plasmonic interaction at the ZnS/InSe and (Au, Yb)/ZnS/InSe interfaces. The hybrid isotype device is found to exhibit photosensing features presented by a responsivity of ∼2.0 A/W, external quantum efficiencies (EQE) and internal quantum efficiencies (IQE) of 395% and 2493%, at basing voltage of 0.3 V, respectively. In addition, the dielectric spectra modeling reveals a plasmon–electron interaction of resonance frequencies in the range of 0.31–5.26 GHz and drift mobility of ∼212 cm2/Vs and 106 cm2/Vs for the Au/ZnS/InSe and Yb/ZnS/InSe, respectively. Moreover, the impedance spectroscopy studies confirm the correctness of the dielectric modeling nominating the Yb/ZnS/InSe/C devices as photodetectors, plasmon resonators and microwave cavities.