Controllable synthesis of p-type Cu₂S nanowires for self-driven NIR photodetector application

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• 作者：Chun-Yan Wu ; Zhi-Qiang Pan ; Zhu Liu ; You-Yi Wang…
• 关键词：Semiconductor nanostructures ; Heterojunction ; Self ; driven NIR photodetector ; Responsivity ; Specific detectivity ; Nanoelectronics
• 刊名：Journal of Nanoparticle Research
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：19
• 期：2
• 全文大小：
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Nanotechnology; Inorganic Chemistry; Characterization and Evaluation of Materials; Physical Chemistry; Optics, Lasers, Photonics, Optical Devices;
• 出版者：Springer Netherlands
• ISSN：1572-896X
• 卷排序：19

文摘

Face-centered cubic Cu₂S nanowires with length of up to 50 μm and diameters in the range of 100–500 nm are synthesized on Si substrates through the chemical vapor deposition method using a mixed gas of Ar and H₂ as the carrier gas under a chamber pressure of about 700 Torr. It was found that the growth of quasi 1D nanostructure followed a typical vapor-liquid-solid (VLS) mechanism in which the element Cu was reduced by H₂ as the catalyst. The as-synthesized Cu₂S nanowires exhibited typical p-type semiconducting characteristics with a conductivity of about 600 S cm−1 and a hole mobility (μ_h) of about 72 cm2 V−1 s−1. Further study reveals that p-Cu₂S nanowires/n-Si heterojunction exhibits distinct rectifying characteristics with a turn-on voltage of ~0.6 V and a rectification ratio of ~300 at ±1 V in the dark and a pronounced photovoltaic behavior with an open circuit voltage (V_oc) of 0.09 V and a short circuit current (I_sc) of 65 nA when illuminated by the NIR light (790 nm, 0.35 mW cm−1), giving rise to a responsivity (R) about 0.8 mA W−1 and specific detectivity (D*) 6.7 × 1010 cm Hz1/2 W−1 at zero bias, which suggests the potential of as-synthesized Cu₂S nanowires applied in the field of self-driven NIR photodetector.