文摘
A new strategy for realizing ultra-narrowband plasmonic absorber has been theoretically demonstrated. Dual-band perfect light absorber with the bandwidth down to single digit level and the maximal absorption exceeding 99.2 % is achieved. Moreover, novel absorber-based sensor platform with high-quality factors (S > 420 nm/RIU, FOM > 84, and FOM* > 5600) are obtained. These features hold the proposed absorber to be a feasible candidate for applications in the sensing detection and notch filtering.