Emission intensity of the λ = 1.54 μm line in ZnO films grown by magnetron sputtering, diffusion doped with Ce, Yb, Er

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• 作者：M. M. Mezdrogina ; M. V. Eremenko ; A. N. Smirnov ; V. N. Petrov…
• 刊名：Semiconductors
• 出版年：2015
• 出版时间：August 2015
• 年：2015
• 卷：49
• 期：8
• 页码：992-999
• 全文大小：481 KB
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• 作者单位：M. M. Mezdrogina (1)
  M. V. Eremenko (1)
  A. N. Smirnov (1)
  V. N. Petrov (1)
  E. I. Terukov (1) (2)
  
  1. Ioffe Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St. Petersburg, 194021, Russia
  2. Saint Petersburg Electrotechnical University “LETI- ul. Prof. Popova 5, St. Petersburg, 197376, Russia
  
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Magnetism and Magnetic Materials
  Electromagnetism, Optics and Lasers
  Russian Library of Science
  
• 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
• ISSN：1090-6479

文摘

The effect of the Er3+-ion excitation type on the photoluminescence spectra of crystalline ZnO(ZnO〈Ce, Yb, Er? films is determined in the cases of resonant (λ = 532 nm, Er3+-ion transition from 4S3/2, 2H11/2 levels to 4I15/2) and non-resonant (λ = 325 nm, in the region near the ZnO band-edge emission) excitation. It is shown that resonant excitation gives rise to lines with various emission intensities, characteristic of the Er3+-ion intracenter 4f transition with λ = 1535 nm when doping crystalline ZnO films with three rare-earth ions (REIs, Ce, Yb, Er) or with two impurities (Ce, Er) or (Er, Yb), independently of the measurement temperature (T = 83 and 300 K). The doping of crystalline ZnO films with rare-earth impurities (Ce, Yb, Er) leads to the efficient transfer of energy to REIs, a consequence of which is the intense emission of an Er3+ ion in the IR spectral region at λmax = 1535 nm. The kick-out diffusion mechanism is used upon the sequential introduction of impurities into semiconductor matrices and during the postgrowth annealing of the ZnO films under study. The crystalline ZnO films doped with Ce, Yb, Er also exhibit intense emission in the visible spectral region at room temperature, which makes them promising materials for optoelectronics.